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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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L99ASC03G датащи(PDF) 37 Page - STMicroelectronics |
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L99ASC03G датащи(HTML) 37 Page - STMicroelectronics |
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37 / 70 page  DocID029080 Rev 2 37/70 L99ASC03G Electrical specifications 69 Figure 17. Watchdog early, late and safe window Table 17. Charge pump output Symbol Parameter Test condition Min. Typ. Max. Unit VCP Charge pump output voltage VS =6 V; ICP =-20 mA; CCPx =220 nF; CCP =1µF VS +7.7 V VS =6 V; ICP =20 mA; CCPx =220 nF; CCP =1µF; -40 °C < Tj <25°C VS + 8.3 V VS =12 V; ICP =0mA; CCPx =220 nF; CCP =1µF VS + 11 VS + 13 VS + 16.5 V ICP Charge pump output current VS =12 V; VCP =VS +10V; CCPx =220 nF; CCP =1µF 20 mA VCPLOW Charge pump low voltage threshold VS + 5.6 VS + 6.0 VS + 6.75 V fCP Clock frequency (internal oscillator) 140 200 260 kHz tfCP Charge pump low filter time 6 14 µs Table 18. Gate driver for external MOSFET Symbol Parameter Test condition Min. Typ. Max. Unit High-side gate drivers DC parameter IGHx(on) Turn-on maximum peak current (SOURCE stage) Tj = 25°C; PCSO = 1111 -250 mA Turn-on minimum peak current (SOURCE stage) Tj = 25°C; PCSO = 0001 -20 mA |
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