STLJS050N12MCLL datasheet(1/7 Pages) ONSEMI

номер детали	STLJS050N12MCLL

подробное описание детали	MOSFET - Power, Single N-Channel, Shielded Gate, PowerTrench 120 V, 50.6 m, 4.5 A

PDF	7 Pages

Scroll/Zoom	100%

производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

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August, 2021 − Rev. 0

1

Publication Order Number:

STLJS050N12MCLL/D

MOSFET - Power, Single

N-Channel, Shielded Gate,

PowerTrench)

120 V, 50.6 m

W, 4.5 A

STLJS050N12MCLL

Features

• Shielded Gate MOSFET Technology

• 50% Lower Qrr than Other MOSFET Suppliers

• Lowers Switching Noise/EMI

• Low Profile − 0.5 mm in MicroFET 2x2 mm

• 100% UIL Tested

• These Devices are Pb−Free and are RoHS Compliant

Typical Applications

• Primary DC−DC MOSFET

• Synchronous Rectifier in DC−DC and AC−DC

• Motor Drive

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

120

V

Gate−to−Source Voltage

VGS

±12

V

Continuous Drain

Current (Note 1)

TA = 25°C

ID

4.5

A

Power Dissipation (Note 1)

TA = 25°C

PD

2.1

W

Power Dissipation (Note 2)

TA = 25°C

PD

0.62

W

Pulsed Drain Current (Note 3)

TA = 25°C

IDM

51

A

Operating Junction and Storage Temperature

Range

TJ, Tstg

−55 to

+150

°C

Single Pulse Drain−to−Source Avalanche

Energy (IL(pk) = 4 A) (Note 4)

EAS

8.0

mJ

Maximum Lead Temperature for Soldering

Purposes (1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Parameter

Symbol

Value

Unit

Thermal Resistance Junction−to−Ambient

(Note 1)

RqJA

60

°C/W

Thermal Resistance Junction−to−Ambient

(Note 2)

RqJA

200

°C/W

1. Surface mounted on a FR−4 board using 1 in2 pad of 2 oz copper.

2. Surface mounted on a FR−4 board using the minimum recommended pad of

2 oz copper.

3. Pulsed ID please refer to Figure 11 SOA graph for more details.

4. EAS of 8 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 4 A,

VDD = 120 V, VGS = 10 V.

5. ESD Rating: HBM = 250 V (Class 1A), CDM = 1500 V (Class C5).

www.onsemi.com

V(BR)DSS

RDS(on) MAX

ID MAX

120 V

50.6 mW @ 10 V

4.5 A

UDFN6

(2 X 2)

CASE 517DZ

MARKING DIAGRAM

(Note: Microdot may be in either location)

N−CHANNEL MOSFET

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

70 mW @ 4.5 V

5L = Specific Device Code

M

= One Digit Date Code

G

= Pb−Free Package

5L MG

G

175 mW @ 2.5 V

Аналогичный номер детали - STLJS050N12MCLL

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M-System Co.,Ltd.	STL	108Kb / 3P	SOFT-TERMINAL
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