STLJS050N12MCLL datasheet(3/7 Pages) ONSEMI

номер детали	STLJS050N12MCLL

подробное описание детали	MOSFET - Power, Single N-Channel, Shielded Gate, PowerTrench 120 V, 50.6 m, 4.5 A

PDF	7 Pages

Scroll/Zoom	100%

производитель	ONSEMI [ON Semiconductor]

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STLJS050N12MCLL

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TYPICAL CHARACTERISTICS

0.0

1.0

2.0

3.0

525

Figure 1. On−Region Characteristics

Figure 2. Normalized On−Resistance vs. Drain

Current and Gate Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

Figure 3. On−Resistance Variation with

Temperature

Figure 4. On−Resistance vs. Gate−to−Source

Voltage

TJ, JUNCTION TEMPERATURE (°C)

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Diode Forward Voltage vs. Current

VGS, GATE−TO−SOURCE VOLTAGE (V)

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

3.5 V

ID = 5 A

VGS = 10 V

TJ = 25°C

VDS = 5 V

4.5 V

VGS = 2.5 V

TJ = −55°C

6.0 V

3.0 V

0.6

0.8

1.2

1.4

2.0

−75 −50 −25

100

150

500

810

250

100

0.0

0.2

0.4

0.6

300

400

0.8

1.0

1.6

1.8

TJ = 25°C

0.1

TJ = 150°C

1.2

1.4

7.5 V

4.5 V

6.0 V

7.5 V

10 V

125

TJ = 150°C

150

200

350

450

TJ = 25°C

TJ = 150°C

TJ = −55°C

VGS = 10 V

ID = 5 A

4.0 V

2.5 V

2.0 V

3.5 V

4.0

5.0

6.0

VGS = 0 V

9.0 V

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