TPS38 datasheet(35/53 Pages) TI

35 / 53 page

Table 12-1. Voltage Options (continued)

100 mV STEPS

400 mV STEPS

500 mV STEPS

1 V STEPS

NOMEN-

CLATURE

VOLTAGE

OPTIONS

NOMEN-

CLATURE

VOLTAGE

OPTIONS

NOMEN-

CLATURE

VOLTAGE

OPTIONS

NOMEN-

CLATURE

VOLTAGE

OPTIONS

NOMEN-

CLATURE

VOLTAGE

OPTIONS

6.2 V

6.3 V

6.4 V

6.5 V

6.6 V

6.7 V

6.8 V

6.9 V

12.2 Support Resources

TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight

from the experts. Search existing answers or ask your own question to get the quick design help you need.

Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do

not necessarily reflect TI's views; see TI's Terms of Use.

12.3 Trademarks

TI E2E™ is a trademark of Texas Instruments.

All trademarks are the property of their respective owners.

12.4 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled

with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may

be more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

12.5 Glossary

TI Glossary

This glossary lists and explains terms, acronyms, and definitions.

13 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

www.ti.com

TPS38-Q1

SNVSBI8C – AUGUST 2020 – REVISED DECEMBER 2021

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