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VSC8540RT датащи(PDF) 68 Page - Microchip Technology

номер детали VSC8540RT
подробное описание детали  Radiation-Tolerant Single Port Fast Ethernet Copper PHY with RGMII/MII/RMII Interfaces
PDF  87 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

VSC8540RT датащи(HTML) 68 Page - Microchip Technology

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VSC8540RT
DS60001603E-page 68
2022 Microchip Technology Inc. and its subsidiaries
8.3.10
THERMAL DIODE
The device includes an on-die diode and internal circuitry for monitoring die temperature (junction temperature). The
operation and accuracy of the diode is not guaranteed and should only be used as a reference.
The on-die thermal diode requires an external thermal sensor, located on the board or in a stand-alone measurement
kit. Temperature measurement using a thermal diode is very sensitive to noise. The following illustration shows a generic
application design.
FIGURE 8-1:
THERMAL DIODE
Note:
Microchip does not support or recommend operation of the thermal diode under reverse bias.
The following table provides the diode parameter and interface specifications with the pins connected internally to VSS
in the device.
TABLE 8-13:
CURRENT CONSUMPTION (VDDMAC)
Mode
Typical (mA)
VDDMAC (Nominal, room temp)
Maximum (mA)
VDDMAC (Vdd max, Tamb = 125 °C)
1.5V
1.8V
2.5V
3.3V
1.575V
1.89V
2.62V
Reset
< 1
< 1
< 1
1
< 1< 1< 1
< 1
Power Down
< 11
< 11
< 11
11
6†2
72
102
132
ActiPHY
< 11
11
11
11
72
82
112
142
No Link
< 11
11
11
11
< 11
11
11
11
MII(100BASE-TX)
6
7
10
12
7
8
11
15
MII(10BASE-T/Te)
1
2
3
3
2
2
3
4
RGMII (100BASE-TX)
5
6
8
10
6
7
10
12
RGMII (10BASE-T/Te) 1
1
2
2
1
2
2
3
RMII (100BASE-TX)
8
10
14
16
9
11
15
22
RMII (10BASE-T/Te)
6
7
10
12
7
8
11
14
1. GMII/MII/RMII
†2.
RGMII
TABLE 8-14:
POWER CONSUMPTION
Parameter
Symbol
Typical
Maximum
Unit
Worst-case power consumption
PD
400
mW
TABLE 8-15:
THERMAL DIODE PARAMETERS
Parameter
Symbol
Typical
Maximum
Unit
Forward bias current
IFW
See note1
1. Typical value is device dependent.
1mA
Diode ideality factor
n
1.008



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