Note:

① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ;

② Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate；

●Thermal resistance

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal resistance, junction - case

②

-

-

5.5

°C/W

Thermal resistance, junction - ambient

-

-

65

°C/W

Soldering temperature, wavesoldering for

-

-

265

°C

●Electronic Characteristics

Parameter

Symbol

Condition

Min.

Typ

Max.

Unit

Drain-Source Breakdown

Voltage

-20

V

Gate Threshold Voltage

-0.45

-0.60

-1.00

V

Drain-Source Leakage Current

-1.0

uA

Gate- Source Leakage Current

±100

nA

Static Drain-source On

Resistance

7.5

9.5

mΩ

9.8

13

mΩ

Forward Transconductance

12

S

Source-drain voltage

Is=-15A

1.00

V

●Electronic Characteristics

Parameter

Symbol

Condition

Min.

Typ

Max.

Unit

Input capacitance

f = 1MHz

-

2521

-

pF

Output capacitance

-

317

-

Reverse transfer capacitance

-

278

-

℃)

Parameter

Symbol

Condition

Min.

Typ

Max.

Unit

Total gate charge

-

28.6

-

nC

Gate - Source charge

-

8.70

-

Gate - Drain charge

-

12.7

-

Shenzhen Tuofeng Semiconductor Technology Co., Ltd

P -CHANNEL ENHANCEMENT MODE POWER MOSFET

2

www.sztuofeng.com

Dec 2021 V1.0

0.85

Body Diode Reverse Recovery

Time

di/dt=100A/µs

27

nS

Body Diode Reverse Recovery

Charge

di/dt=100A/µs

85

nC

TF080P02M