TF080P02M datasheet(1/5 Pages) TUOFENG

номер детали	TF080P02M

подробное описание детали	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	5 Pages

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производитель	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

домашняя страница	http://www.sztuofeng.com/?lang=en

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1 / 5 page

●Ordering Information:

●Absolute Maximum Ratings

（T

C =25

℃

）

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

±12

V

Continuous Drain Current

ID@TC=25

℃

-40

A

ID@TC=75

℃

-35

A

ID @TC=100

℃

-30

A

Pulsed Drain Current ①

IDM

-100

A

Total Power Dissipation

②

PD@TC=25

℃

30

W

Total Power Dissipation

PD@TA=25

℃

2.0

W

Operating Junction Temperature

T J

-55 to 150

℃

Storage Temperature

TSTG

-55 to 150

℃

● General Description

The TF080P02M combines advanced trench

MOSFET technology with a low resistance package

toprovide extremely low RDS(ON).

● Features

Advance high cell density Trench technology

Low RDS(ON) to minimize conductive loss

Low Gate Charge for fast switching

Low Thermal resistance

●Application

MB/VGA Vcore

SMPS 2nd Synchronous Rectifier

POL application

BLDC Motor driver

● Product Summary

VDS =-20V

ID=-40A

RDSON(-4.5V typ) =7.5mΩ

RDSON(-2.5V typ) =9.8mΩ

Part NO.

TF080P02M

Marking1

080P02M

Marking2

TF:tuofeng; Y:year code; XX:Week; AA:device code;

Basic ordering unit (pcs)

5000

TF080P02M

Shenzhen Tuofeng Semiconductor Technology Co., Ltd

P -CHANNEL ENHANCEMENT MODE POWER MOSFET

1

www.sztuofeng.com

Dec 2021 V1.0

D

G

S

080P02M

AYXXA

●

S

G

S

D

G

S

D

TF

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TF080P02M датащи(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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