 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
ISC080N10NM6 датащи(PDF) 4 Page - Infineon Technologies AG |
|
|
|||||||||||||||||||||||||||||
ISC080N10NM6 датащи(HTML) 4 Page - Infineon Technologies AG |
|
|
4 / 12 page  4 OptiMOSTM6Power-Transistor,100V ISC080N10NM6 Rev.2.0,2021-07-05 Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 100 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.3 2.8 3.3 V VDS=VGS,ID=36µA Zero gate voltage drain current IDSS - - 0.1 10 1.0 100 µA VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C1) Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - - 7.1 8.7 8.05 10 m Ω VGS=10V,ID=20A VGS=8V,ID=10A Gate resistance RG 0.6 1.2 1.8 Ω - Transconductance gfs 15 30 - S |VDS| ≥2|ID|RDS(on)max,ID=20A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 1400 1800 pF VGS=0V,VDS=50V,f=1MHz Output capacitance 1) Coss - 310 390 pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance 1) Crss - 9 13 pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) - 6.4 - ns VDD=50V,VGS=10V,ID=10A, RG,ext=1.6 Ω Rise time tr - 1.5 - ns VDD=50V,VGS=10V,ID=10A, RG,ext=1.6 Ω Turn-off delay time td(off) - 10.7 - ns VDD=50V,VGS=10V,ID=10A, RG,ext=1.6 Ω Fall time tf - 4.3 - ns VDD=50V,VGS=10V,ID=10A, RG,ext=1.6 Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge 1) Qgs - 6.4 8.5 nC VDD=50V,ID=10A,VGS=0to10V Gate charge at threshold 1) Qg(th) - 3.9 4.9 nC VDD=50V,ID=10A,VGS=0to10V Gate to drain charge 1) Qgd - 3.4 5.1 nC VDD=50V,ID=10A,VGS=0to10V Switching charge Qsw - 5.9 - nC VDD=50V,ID=10A,VGS=0to10V Gate charge total 1) Qg - 19 24 nC VDD=50V,ID=10A,VGS=0to10V Gate plateau voltage Vplateau - 4.6 - V VDD=50V,ID=10A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 17 - nC VDS=0.1V,VGS=0to10V Output charge 1) Qoss - 35 44 nC VDS=50V,VGS=0V 1) Defined by design. Not subject to production test. 2) See ″Gate charge waveforms″ for parameter definition |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
