MPC5644BCAMMJ1 datasheet(61/116 Pages) NXP

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Electrical Characteristics

MPC5646C Microcontroller DataSheet, Rev. 7

NXP Semiconductors

ECC circuitry provides correction of single bit faults and is used to improve further automotive reliability results. Some units

will experience single bit corrections throughout the life of the product with no impact to product reliability.

4.10.2

Flash memory power supply DC characteristics

Table 29 shows the flash memory power supply DC characteristics on external supply.

Table 28. Flash memory read access timing1

1 Max speed is the maximum speed allowed including PLL frequency modulation (FM).

Symbol

Parameter

Conditions2

2 V

DD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified.

Frequency

range

Unit

Code flash

memory

Data flash

memory

fREAD

P Maximum frequency for Flash reading 5 wait states

13 wait states

120 —100

MHz

4 wait states

11 wait states

100—80

3 wait states

9 wait states

80—64

2 wait states

7 wait states

64—40

1 wait states

4 wait states

40—20

0 wait states

2 wait states

20—0

Table 29. Flash memory power supply DC electrical characteristics

Symbol

Parameter

Conditions1

1 V

DD = 3.3 V ± 10% / 5.0 V ± 10%, TA = –40 to 125 °C, unless otherwise specified.

Value2

2 All values need to be confirmed during device validation.

Unit

Min

Typ

Max

ICFREAD

3 Data based on characterization results, not tested in production.

CC Sum of the current consumption

on VDD_HV_A on read access

Flash memory module read

fCPU = 120 MHz + 2%

4 f

CPU 120 MHz + 2% can be achieved over full temperature 125 °C ambient, 150 °C junction temperature.

Code flash

memory

IDFREAD

(3)

Data flash

memory

ICFMOD

(3) CC Sum of the current consumption

on VDD_HV_A (program/erase)

Program/Erase on-going

while reading flash memory

registers

fCPU = 120 MHz + 2%

(4)

Code flash

memory

IDFMOD

(3)

Data flash

memory

ICFLPW

(3)

CC Sum of the current consumption

on VDD_HV_A during flash

memory low power mode

Code flash

memory

1.1

ICFPWD

(3) CC Sum of the current consumption

on VDD_HV_A during flash

memory power down mode

Code flash

memory

150

µA

IDFPWD

(3)

Data flash

memory

150

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