MPC5644BCAMMJ1 datasheet(60/116 Pages) NXP

60 / 116 page

MPC5646C Microcontroller DataSheet, Rev. 7

Electrical Characteristics

NXP Semiconductors

Table 26 shows the data flash memory program and erase characteristics.

Table 26. Data flash memory—Program and erase specifications

Symbol

Parameter

Value

Unit

Min

Typ1

1 Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to

change pending device characterization.

Initial

max2

2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.

Max3

3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum

values are characterized but not guaranteed.

Twprogram

Word (32 bits) program time4

4 Actual hardware programming times. This does not include software overhead.

—30

500

µs

T16Kpperase

16 KB block pre-program and erase time

—

700

800

5000

Teslat

D Erase Suspend Latency

—

µs

tESRT

5 It is time between erase suspend resume and next erase suspend.

C Erase Suspend Request Rate

—

tPABT

D Program Abort Latency

—

µs

tEAPT

D Erase Abort Latency

—

µs

Table 27. Flash memory module life

Symbol

Parameter

Conditions

Value

Unit

Min

Typ

P/E

C Number of program/erase cycles per

block for 16 Kbyte blocks over the

operating temperature range (TJ)

—

100,000

100,000 cycles

Number of program/erase cycles per

block for 32 Kbyte blocks over the

operating temperature range (TJ)

—

10,000

100,000 cycles

Number of program/erase cycles per

block for 128 Kbyte blocks over the

operating temperature range (TJ)

—

1,000

100,000 cycles

Retention CC

C Minimum data retention at 85 °C

average ambient temperature1

1 Ambient temperature averaged over duration of application, not to exceed recommended product operating

temperature range.

Blocks with 0–1,000 P/E

cycles

—

years

Blocks with 10,000 P/E

cycles

—

years

Blocks with 100,000 P/E

cycles

5—

years

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