MPC5644BCAMMJ1 datasheet(59/116 Pages) NXP

59 / 116 page

Electrical Characteristics

MPC5646C Microcontroller DataSheet, Rev. 7

NXP Semiconductors

4.10

Flash memory electrical characteristics

4.10.1

Program/Erase characteristics

Table 25 shows the code flash memory program and erase characteristics.

9 Subject to change, Configuration: 1 × e200z4d + 4 kbit/s Cache, 1 × e200z0h (1/2 system frequency), CSE,

× eDMA (10 ch.), 6 × FlexCAN (4 × 500 kbit/s, 2 × 125 kbit/s), 4 × LINFlexD (20 kbit/s), 6 × DSPI (2 × 2Mbit/s,

× 4Mbit/s, 1 × 10 Mbit/s), 16 × Timed I/O, 16 × ADC Input, 1 × FlexRay (2 ch., 10 Mbit/s), 1 × FEC (100 Mbit/s),

× RTC, 4 PIT channels, 1 × SWT, 1 × STM. For lower pin count packages reduce the amount of timed I/O’s and ADC

channels. RUN current measured with typical application with accesses on both code flash and RAM.

10 This value is obtained from limited sample set

11 Data Flash Power Down. Code Flash in Low Power. SIRC 128 kHz and FIRC 16 MHz ON. 16 MHz XTAL clock.

FlexCAN: instances: 0, 1, 2 ON (clocked but no reception or transmission), instances: 4, 5, 6 clocks gated. LINFlex:

instances: 0, 1, 2 ON (clocked but no reception or transmission), instance: 3-9 clocks gated. eMIOS: instance: 0 ON

(16 channels on PA[0]-PA[11] and PC[12]-PC[15]) with PWM 20 kHz, instance: 1 clock gated. DSPI: instance: 0

(clocked but no communication, instance: 1-7 clocks gated). RTC/API ON. PIT ON. STM ON. ADC ON but no

conversion except 2 analog watchdogs.

12 Only for the “P” classification: No clock, FIRC 16 MHz OFF, SIRC128 kHz ON, PLL OFF, HPvreg OFF, LPVreg ON.

All possible peripherals off and clock gated. Flash in power down mode.

13 Only for the “P” classification: LPreg ON, HPVreg OFF, 96 KB RAM ON, device configured for minimum consumption,

all possible modules switched-off.

14 Only for the “P” classification: LPreg ON, HPVreg OFF, 64 KB RAM ON, device configured for minimum consumption,

all possible modules switched-off.

15 LPreg ON, HPVreg OFF, 8 KB RAM ON, device configured for minimum consumption, all possible modules switched

OFF.

Table 25. Code flash memory—Program and erase specifications

Symbol

Parameter

Value

Unit

Min

Typ1

1 Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to

change pending device characterization.

Initial

max2

2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.

Max3

3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum

values are characterized but not guaranteed.

Tdwprogram

Double word (64 bits) program time4

4 Actual hardware programming times. This does not include software overhead.

—18

500

µs

T16Kpperase

16 KB block pre-program and erase time

—

200

500

5000

T32Kpperase

32 KB block pre-program and erase time

—

300

600

5000

T128Kpperase

128 KB block pre-program and erase time

—

600

1300

5000

Teslat

D Erase Suspend Latency

—

µs

tESRT

5 It is Time between erase suspend resume and the next erase suspend request.

C Erase Suspend Request Rate

—

tPABT

D Program Abort Latency

—

µs

tEAPT

D Erase Abort Latency

—

µs

MPC5644BCAMMJ1 датащи(PDF) 59 Page - NXP Semiconductors

MPC5644BCAMMJ1 датащи(HTML) 59 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

датащи скачать

ссылки URL