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PT2000 датащи(PDF) 21 Page - NXP Semiconductors |
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PT2000 датащи(HTML) 21 Page - NXP Semiconductors |
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21 / 148 page ![]() 21 NXP Semiconductors PT2000 High-side VDS/SRC monitor (continued) VDS_HS_TH (0000) High-side VDS threshold (0000) -0.03 0.0 0.03 V VDS_HS_TH (1001) High-side VDS threshold (1001) 0.07 0.10 0.13 V VDS_HS_TH (1010) High-side VDS threshold (1010) 0.155 0.2 0.245 V VDS_HS_TH (1011) High-side VDS threshold (1011) 0.25 0.3 0.35 V VDS_HS_TH (1100) High-side VDS threshold (1100) 0.345 0.4 0.455 V VDS_HS_TH (0001) High-side VDS threshold (0001) 0.44 0.5 0.56 V VDS_HS_TH (0010) High-side VDS threshold (0010) 0.9 1.0 1.1 V VDS_HS_TH (0011) High-side VDS threshold (0011) 1.35 1.5 1.65 V VDS_HS_TH (0100) High-side VDS threshold (0100) 1.8 2.0 2.2 V VDS_HS_TH (0101) High-side VDS threshold (0101) 2.29 2.45 2.61 V VDS_HS_TH (0110) High-side VDS threshold (0110) 2.76 2.95 3.14 V VDS_HS_TH (0111) High-side VDS threshold (0111) •VVBATT_VDS = 5.5 V to 72 V, VVBOOST_VDS = 5.5 V to 72 V •VVBATT_VDS = 5.0 V to 5.5 V, VVBOOST_VDS = 5.0 V to 5.5 V 3.23 3.00 3.45 3.45 3.67 3.67 V tTH_HSVDS High-side VDS/SRC threshold settling time — 0.4 1.0 μs VSRC_HS_TH (0000) High-side VSRC threshold (0000) -0.03 0.0 0.03 V VSRC_HS_TH (1001) High-side VSRC threshold (1001) 0.07 0.10 0.13 V VSRC_HS_TH (1010) High-side VSRC threshold (1010) 0.155 0.2 0.245 V VSRC_HS_TH (1011) High-side VSRC threshold (1011) 0.25 0.3 0.35 V VSRC_HS_TH (1100) High-side VSRC threshold (1100) 0.345 0.4 0.455 V VSRC_HS_TH (0001) High-side VSRC threshold (0001) 0.44 0.5 0.56 V VSRC_HS_TH (0010) High-side VSRC threshold (0010) 0.9 1.0 1.1 V VSRC_HS_TH (0011) High-side VSRC threshold (0011) 1.35 1.5 1.65 V VSRC_HS_TH (0100) High-side VSRC threshold (0100) 1.8 2.0 2.2 V VSRC_HS_TH (0101) High-side VSRC threshold (0101) 2.38 2.55 2.72 V VSRC_HS_TH (0110) High-side VSRC threshold (0110) 2.85 3.0 3.15 V VSRC_HS_TH (0111) High-side VSRC threshold (0111) 3.33 3.5 3.68 V Table 9. High-side VDS/SRC monitor electrical characteristics (continued) Characteristics noted under conditions -40 ºC < TA < +125 ºC, referenced to ground, unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted. Symbol Characteristic Min. Typ. Max. Unit Notes |
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