MIC33153 datasheet(5/28 Pages) MICROCHIP

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DS20006223B-page 5

MIC33153

PWM Switch On-Resistance

RDSON(HS)

—

0.2

—

ISW = 100 mA PMOS

RDSON(LS)

—

0.19

—

ISW = –100 mA NMOS

Maximum Switching

Frequency

fSW(MAX)

—

MHz

IOUT = 300 mA

Soft-Start Time

tSS

—

320

—

µs

VOUT = 90%, CSS = 470 pF

Soft-Start Current

ISS

—

2.7

—

µA

VSS = 0V

PG Threshold (Rising)

VPGTHR

%VOUT —

PG Threshold Hysteresis

VPGHYS

—

%VOUT —

PG Delay Time

tD_PG

—

µs

Rising

Enable Threshold

VENTH

0.5

0.9

1.2

Turn-On

Enable Input Current

IEN

—

0.1

µA

—

Overtemperature Shutdown

TSD

—

160

—

°C

—

Overtemperature Shutdown

Hysteresis

TSDHYS

—

°C

—

TEMPERATURE SPECIFICATIONS (Note 1)

Parameters

Symbol

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges

Operating Junction Temperature Range

–40

—

+125

°C

—

Storage Temperature Range

–65

—

+150

°C

—

Lead Temperature

—

260

°C

Soldering, 10 sec.

Package Thermal Resistances

Thermal Resistance 14-Lead TDFN

JA

—

°C/W —

Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable

junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the

maximum allowable power dissipation will cause the device operating junction temperature to exceed the

maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.

ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Characteristics: TA = 25°C, VIN = VEN = 3.6V; COUT = 4.7 µF; unless otherwise specified. Bold values

indicate –40°C ≤ TJ ≤ +125°C.

Parameter

Symbol

Min.

Typ.

Max.

Units Conditions

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