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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LT4239 датащи(PDF) 3 Page - Analog Devices |
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LT4239 датащи(HTML) 3 Page - Analog Devices |
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3 / 24 page  LT4239 3 Rev. 0 For more information www.analog.com ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = 12V, IBOOST = 0V, RDRAIN = 100kΩ, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Supplies VCC Input Supply Range l 4 20 V ICC Input Supply Current VCC = 4V to 13.2V l 0.6 1 mA VCC(UVL) VCC Undervoltage Lockout VCC Rising l 3.3 3.6 3.8 V ∆VCC(HYST) VCC Undervoltage Lockout Hysteresis 100 mV Circuit Breaker and Current Limit ∆VSENSE2(CB) Circuit Breaker Trip Threshold (VSENSE2 – VOUTK) IBOOST = 0V, OUT = VCC IBOOST = 3V, OUT = VCC l l 9.5 19 10 20 10.5 21 mV mV ∆VSENSE2(ACL) Analog Current Limit Threshold (VSENSE2 – VOUTK) IBOOST = 0V IBOOST = 3V l l 13 26 15 30 17 34 mV mV ∆VSENSE2(FAST) Fast Comparator Trip Threshold (VSENSE2 – VOUTK) IBOOST = 0V IBOOST = 3V l l 30 60 40 80 50 100 mV mV ∆VSENSE1(ACL) Analog Current Limit Threshold (VSENSE1 – VOUTK) l 45 50 55 mV ISENSE1 SENSE1 Current SENSE1 = SENSE2 = OUTK = 12V l 20 50 100 µA ISENSE2 SENSE2 Current SENSE1 = SENSE2 = OUTK = 12V l 20 70 140 µA IOUTK OUTK Current SENSE1 = SENSE2 = OUTK = 12V l 40 100 200 µA IOUT OUT Current OUT = 12V l 0.1 0.45 1 mA Gate Drive ∆VGATE Gate Drive IGATE1 = 0, –1µA l 10 12 14 V IGATE2 = 0, –5µA l 10 12 14 V ∆VGATE(TH) Gate Threshold for Start-Up and Power Good l 10 V IGATE1(UP) Gate Pull-Up Current Gate Drive On, ∆VGATE1 = 0V l –7 –10 –13 µA IGATE2(UP) Gate Pull-Up Current Gate Drive On, ∆VGATE2 = 0V l –35 –50 –65 µA IGATE1(DN) Gate Off Pull-Down Current Gate Drive Off, OUT=12V, ∆VGATE1 = 10V l 5 10 25 mA IGATE2(DN) Gate Off Pull-Down Current (UV Turn-Off) (Overcurrent Fault) Gate Drive Off, OUT=12V, ∆VGATE2 = 10V Gate Drive Off, OUT=12V, ∆VGATE2 = 10V l l 5 30 10 50 25 70 mA mA IGATE1(FPD) Gate Fast Pull-Down Current Fast Turn-Off, OUT=12V, ∆VGATE1 = 10V l 50 130 300 mA IGATE2(FPD) Gate Fast Pull-Down Current Fast Turn-Off, OUT=12V, ∆VGATE2 = 10V l 0.3 0.6 1.5 A Comparator Inputs ∆VDS1 Voltage to Enable GATE2 Start-Up (VCC – VOUTK) Falling l 0.8 1 1.3 V ∆VDS2 Voltage to Start Power Good Delay (VCC – VOUTK) Falling l 80 100 130 mV ∆VDS(FET-BAD) FET-Bad Fault Threshold After Power Good (VCC – VOUTK) IBOOST = 0V IBOOST = 3V l l 80 160 100 200 120 240 mV mV ∆VDS(FETSHORT) FETShort Fault Threshold During Debounce (VCC – VOUTK) l 1.1 1.3 1.5 V VUV(TH) UV Threshold Voltage UV Rising l 1.207 1.232 1.257 V ∆VUV(HYST) UV Hysteresis 50 mV VUV(RESET) UV Fault Reset Threshold Voltage UV Falling l 0.45 0.6 0.65 V VIBOOST(TH) IBOOST High Threshold Voltage l 1.6 V IBOOST Low Threshold Voltage l 0.8 V |
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