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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8S007C8 датащи(PDF) 81 Page - STMicroelectronics |
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STM8S007C8 датащи(HTML) 81 Page - STMicroelectronics |
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81 / 93 page  DS8633 Rev 6 81/93 STM8S007C8 Electrical characteristics 82 Electromagnetic interference (EMI) Emission tests conform to the IEC 61967-2 standard for test software, board layout and pin loading. Absolute maximum ratings (electrical sensitivity) Based on two different tests (ESD and LU) using specific measurement methods, the product is stressed in order to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electrostatic discharge (ESD) Electrostatic discharges (three positive then three negative pulses separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test conforms to the JESD22-A114A/A115A standard. For more details, refer to the application note AN1181. Table 46. EMI data Symbol Parameter Conditions Unit General conditions Monitored frequency band Max fHSE/fCPU(1) 16 MHz/ 8 MHz 16 MHz/ 16 MHz 24 MHz/ 24 MHz SEMI Peak level VDD = 5 V TA = 25 °C LQFP48 package conforming to IEC 61967-2 0.1MHz to 30 MHz 14 13 24 dBµV 30 MHz to 130 MHz 19 23 17 130 MHz to 1 GHz -4 -4 7 EMI level - 1.5 2 2.5 - 1. Data based on characterization results, not tested in production. Table 47. ESD absolute maximum ratings Symbol Ratings Conditions Class Maximum value(1) 1. Guaranteed by characterization results. Unit VESD(HBM) Electrostatic discharge voltage (Human body model) TA = 25°C, conforming to JESD22-A114 A 2000 V VESD(CDM) Electrostatic discharge voltage (Charge device model) TA= 25°C, conforming to JESD22-C101 IV 1000 V |
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