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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8S007C8 датащи(PDF) 60 Page - STMicroelectronics |
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STM8S007C8 датащи(HTML) 60 Page - STMicroelectronics |
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60 / 93 page  Electrical characteristics STM8S007C8 60/93 DS8633 Rev 6 9.3.5 Memory characteristics RAM and hardware registers Flash program memory and data EEPROM General conditions: TA = -40 to 85 °C. Table 33. RAM and hardware registers Symbol Parameter Conditions Min Unit VRM Data retention mode(1) 1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware registers (only in halt mode). Guaranteed by design. Halt mode (or reset) VIT-max(2) 2. Refer to Table 17 on page 47 for the value of VIT-max. V Table 34. Flash program memory and data EEPROM Symbol Parameter Conditions Min(1) 1. Guaranteed by characterization results. Typ Max Unit VDD Operating voltage (all modes, execution/write/erase) fCPU ≤ 16 MHz 2.95 - 5.5 V tprog Standard programming time (including erase) for byte/word/block (1 byte/4 bytes/128 bytes) -- 6.0 6.6 ms Fast programming time for 1 block (128 bytes) -- 3.0 3.3 ms terase Erase time for 1 block (128 bytes) - - 3.0 3.3 ms NRW Erase/write cycles(2) (program memory) 2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation addresses a single byte. TA = 85 °C 100 - - cycles Erase/write cycles(2) (data memory) 100 k - - tRET Data retention (program memory) after 100 erase/write cycles at TA = 85 °C TRET = 55° C 20 - - years Data retention (data memory) after 10 k erase/write cycles at TA = 85 °C 20 - - Data retention (data memory) after 100 k erase/write cycles at TA = 85 °C TRET = 85° C 1.0 - - IDD Supply current (Flash programming or erasing for 1 to 128 bytes) -- 2.0 - mA |
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