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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MCT8316Z датащи(PDF) 13 Page - Texas Instruments |
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MCT8316Z датащи(HTML) 13 Page - Texas Instruments |
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13 / 100 page  TJ = –40°C to +150°C, VVM = 4.5 to 35 V (unless otherwise noted). Typical limits apply for TA = 25°C, VVM = 24 V PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SR Phase pin slew rate switching low to high (Rising from 20 % to 80 %) VVM = 24 V, SLEW = 00b or SLEW pin tied to AGND 14 25 45 V/us VVM = 24 V, SLEW = 01b or SLEW pin to Hi-Z 30 50 80 V/us VVM = 24 V, SLEW = 10b or SLEW pin to 47 kΩ +/- 5% to AVDD 80 125 185 V/us VVM = 24 V, SLEW = 11b or SLEW pin tied to AVDD 130 200 280 V/us SR Phase pin slew rate switching high to low (Falling from 80 % to 20 % VVM = 24 V, SLEW = 00b or SLEW pin tied to AGND 14 25 45 V/us VVM = 24 V, SLEW = 01b or SLEW pin to Hi-Z 30 50 80 V/us VVM = 24 V, SLEW = 10b or SLEW pin to 47 kΩ +/- 5% to AVDD 80 125 185 V/us VVM = 24 V, SLEW = 11b or SLEW pin tied to AVDD 110 200 280 V/us ILEAK Leakage current on OUTx VOUTx = VVM, nSLEEP = 1 5 mA Leakage current on OUTx VOUTx = 0 V, nSLEEP = 1 1 µA tDEAD Output dead time (high to low / low to high) VVM = 24 V, SR = 25 V/µs, HS driver ON to LS driver OFF 1800 3400 ns VVM = 24 V, SR = 50 V/µs, HS driver ON to LS driver OFF 1100 1550 ns VVM = 24 V, SR = 125 V/µs, HS driver ON to LS driver OFF 650 1000 ns VVM = 24 V, SR = 200 V/µs, HS driver ON to LS driver OFF 500 750 ns tPD Propagation delay (high-side / low-side ON/OFF) VVM = 24 V, PWM = 1 to OUTx transisition, SR = 25 V/µs 2000 4550 ns VVM = 24 V, PWM = 1 to OUTx transisition, SR = 50V/µs 1200 2150 ns VVM = 24 V, PWM = 1 to OUTx transisition, SR = 125 V/µs 800 1350 ns VVM = 24 V, PWM = 1 to OUTx transisition, SR = 200 V/µs 650 1050 ns tMIN_PULSE Minimum output pulse width SR = 200 V/µs 600 ns HALL COMPARATORS VICM Input Common Mode Voltage (Hall) 0.5 AVDD – 1.2 V VHYS Voltage hysteresis (SPI Device) HALL_HYS = 0 1.5 5 8 mV HALL_HYS = 1 35 50 80 mV Voltage hysteresis (HW Device) 1.5 5 8 mV ΔVHYS Hall comparator hysteresis difference Between Hall A, Hall B and Hall C comparator –8 8 mV VH(MIN) Minimum Hall Differential Voltage 40 mV II Input leakage current HPX = HNX = 0 V –1 1 μA tHDG Hall deglitch time 0.6 1.15 1.7 μs tHEDG Hall Enable deglitch time During Power up 1.4 μs PULSE-BY-PULSE CURRENT LIMIT VLIM Voltage on VLIM pin for cycle by cycle current limit AVDD/2 AVDD/2– 0.4 V ILIMIT Current limit corresponding to VLIM pin voltage range 0 8 A www.ti.com MCT8316Z-Q1 SLVSGO3 – DECEMBER 2021 Copyright © 2021 Texas Instruments Incorporated Submit Document Feedback 13 Product Folder Links: MCT8316Z-Q1 |
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