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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MCT8316Z датащи(PDF) 32 Page - Texas Instruments |
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MCT8316Z датащи(HTML) 32 Page - Texas Instruments |
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32 / 100 page  8.3.6 Charge Pump Because the output stages use N-channel FETs, the device requires a gate-drive voltage higher than the VM power supply to enhance the high-side FETs fully. The MCT8316Z-Q1 integrates a charge-pump circuit that generates a voltage above the VM supply for this purpose. The charge pump requires two external capacitors for operation. See the block diagram, pin descriptions and see section (Section 8.3 ) for details on these capacitors (value, connection, and so forth). The charge pump shuts down when nSLEEP is low. VM CP CCP VM CPH Charge Pump Control VM CPL CFLY Figure 8-15. MCT8316Z-Q1 Charge Pump MCT8316Z-Q1 SLVSGO3 – DECEMBER 2021 www.ti.com 32 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: MCT8316Z-Q1 |
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