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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8L151X6 датащи(PDF) 93 Page - STMicroelectronics |
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STM8L151X6 датащи(HTML) 93 Page - STMicroelectronics |
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93 / 147 page  DS6948 Rev 11 93/147 STM8L151x6/8 STM8L152x6/8 Electrical parameters 124 Figure 23. LSE oscillator circuit diagram Internal clock sources Subject to general operating conditions for VDD, and TA. High speed internal RC oscillator (HSI) In the following table, data are based on characterization results unless otherwise specified. 4. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer. OSC_OUT OSC_IN fLSE CL1 CL2 RF STM8 Resonator Consumption control gm Rm Cm Lm CO Resonator MS32624V1 Table 33. HSI oscillator characteristics Symbol Parameter Conditions(1) Min. Typ. Max. Unit fHSI Frequency VDD = 3.0 V 16 MHz ACCHSI Accuracy of HSI oscillator (factory calibrated) VDD = 3.0 V, TA = 25 °C -1 (2) 1 (2) % VDD = 3.0 V, 0 °C ≤TA ≤ 55 °C -1.5 1.5 % VDD = 3.0 V, -10 °C ≤TA ≤ 70 °C -2 2 % VDD = 3.0 V, -10 °C ≤TA ≤ 85 °C -2.5 2 % VDD = 3.0 V, -10 °C ≤TA ≤ 125 °C -4.5 2 % 1.65 V ≤VDD ≤ 3.6 V, -40 °C ≤TA ≤ 125 °C -4.5 3 % TRIM HSI user trimming step(3) Trimming code ≠ multiple of 16 0.4 0.7 % Trimming code = multiple of 16 ± 1.5 % tsu(HSI) HSI oscillator setup time (wakeup time) 3.7 6 (4) µs IDD(HSI) HSI oscillator power consumption 100 140(4) µA 1. VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified. 2. Tested in production. 3. The trimming step differs depending on the trimming code. It is usually negative on the codes which are multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0). Refer to the AN3101 “STM8L15x internal RC oscillator calibration” application note for more details. |
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