IRFBC30AS datasheet(2/12 Pages) VISHAY

2 / 12 page

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Document Number: 91109

S11-1052-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL

Vishay Siliconix

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 μs; duty cycle  2 %.

c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.

d. Uses IRFBC30A/SiHFBC30A data and test conditions.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient (PCB

Mounted, steady-state)a

RthJA

-40

°C/W

Maximum Junction-to-Case (Drain)

RthJC

-1.7

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0, ID = 250 μA

600

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mAd

-0.67

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.5

Gate-Source Leakage

IGSS

VGS = ± 30 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 600 V, VGS = 0 V

μA

VDS = 480 V, VGS = 0 V, TJ = 125 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 2.2 Ab

2.2



Forward Transconductance

gfs

VDS = 50 V, ID = 2.2 A

2.1

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

510

Output Capacitance

Coss

-70

Reverse Transfer Capacitance

Crss

-3.5

Output Capacitance

Coss

VGS = 0 V

VDS = 1.0 V, f = 1.0 MHz

730

VDS = 480 V, f = 1.0 MHz

Effective Output Capacitance

Coss eff.

VDS = 0 V to 480 Vc

-31

Total Gate Charge

VGS = 10 V

ID = 3.6 A, VDS = 480 V,

see fig. 6 and 13b

Gate-Source Charge

Qgs

5.4

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 300 V, ID = 3.6 A,

Rg = 12 , RD = 82 , see fig. 10b, d

-9.8

Rise Time

-13

Turn-Off Delay Time

td(off)

-19

Fall Time

-12

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

3.6

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb

1.6

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μsb,

400

600

Body Diode Reverse Recovery Charge

Qrr

-1.1

1.7

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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