IRFBC30AS datasheet(1/12 Pages) VISHAY

номер детали	IRFBC30AS

подробное описание детали	Power MOSFET

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Document Number: 91109

www.vishay.com

S11-1052-Rev. C, 30-May-11

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Power MOSFET

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL

Vishay Siliconix

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Low Gate Charge Qg Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Effective Coss Specified

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Single Transistor Flyback

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting TJ = 25 °C, L = 46 mH, Rg = 25 , IAS = 3.6 A (see fig. 12).

c. ISD  3.6 A, dI/dt  170 A/μs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case.

e. Uses IRFBC30A/SiHFBC30A data and test conditions.

PRODUCT SUMMARY

VDS (V)

600

RDS(on) ()VGS = 10 V

2.2

Qg (Max.) (nC)

23

Qgs (nC)

5.4

Qgd (nC)

11

Configuration

Single

N-Channel MOSFET

G

D

S

D2PAK (TO-263)

G

D

S

I2PAK (TO-262)

ORDERING INFORMATION

Package

D2PAK (TO-263)

I2PAK (TO-262)

Lead (Pb)-free and Halogen-free

SiHFBC30AS-GE3

SiHFBC30ASTRL-GE3a

SiHFBC30ASTRR-GE3a

SiHFBC30AL-GE3

Lead (Pb)-free

IRFBC30ASPbF

IRFBC30ASTRLPbFa

IRFBC30ASTRRPbFa

IRFBC30ALPbF

SiHFBC30AS-E3

SiHFBC30ASTL-E3a

SiHFBC30ASTR-E3a

SiHFBC30AL-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

600

V

Gate-Source Voltage

VGS

± 30

Continuous Drain Current

VGS at 10 V

TC = 25 °C

ID

3.6

A

TC = 100 °C

2.3

Pulsed Drain Currenta, e

IDM

14

Linear Derating Factor

0.69

W/°C

Single Pulse Avalanche Energyb

EAS

290

mJ

Avalanche Currenta

IAR

3.6

A

Repetiitive Avalanche Energya

EAR

7.4

mJ

Maximum Power Dissipation

TC = 25 °C

PD

74

W

Peak Diode Recovery dV/dtc, e

dV/dt

7.0

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

300d

* Pb containing terminations are not RoHS compliant, exemptions may apply

Аналогичный номер детали - IRFBC30AS

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRFBC30AS	147Kb / 10P	Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)
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