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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LT8607 датащи(PDF) 4 Page - Analog Devices |
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LT8607 датащи(HTML) 4 Page - Analog Devices |
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4 / 24 page  LT8607/LT8607B 4 Rev. D For more information www.analog.com Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: The LT8607E is guaranteed to meet performance specifications from 0°C to 125°C junction temperature. Specifications over the –40°C to 125°C operating junction temperature range are assured by design, characterization, and correlation with statistical process controls. The LT8607I is guaranteed over the full –40°C to 125°C operating junction temperature range. The LT8607H is guaranteed over the full –40°C to 150°C operating junction temperature range. High junction temperatures degrade operating lifetimes. Operating lifetime is derated at junction temperatures greater than 125°C. Note 3: This IC includes overtemperature protection that is intended to protect the device during overload conditions. Junction temperature will exceed 150°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature will reduce lifetime. ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. PARAMETER CONDITIONS MIN TYP MAX UNITS Feedback Pin Input Current LT8607/LT8607B VFB = 1.0V l ±20 nA Output Pin Input Current LT8607-5 VOUT = 6.0V l 900 nA Minimum On-Time ILOAD = 500mA, SYNC = 0V or LT8607 DFN ILOAD = 500mA, SYNC = 1.9V or LT8607B DFN l l 35 35 65 60 ns ns Minimum Off Time ILOAD = 300mA l 93 130 ns Oscillator Frequency MSOP Package RT = 221k, ILOAD = 350mA RT = 60.4k, ILOAD = 350mA RT = 18.2k, ILOAD = 350mA l l l 155 640 1.90 200 700 2.00 245 760 2.10 kHz kHz MHz DFN Package RT = 221k, ILOAD = 350mA RT = 60.4k, ILOAD = 350mA RT = 18.2k, ILOAD = 350mA l l l 140 610 1.85 200 700 2.00 260 790 2.15 kHz kHz MHz Top Power NMOS On-Resistance ILOAD = 500mA 375 mΩ Top Power NMOS Current Limit MSOP Package l 1.2 1.6 2.0 A DFN Package l 1.2 1.7 2.2 A Bottom Power NMOS On-Resistance 240 mΩ SW Leakage Current VIN = 36V 5 µA EN/UV Pin Threshold EN/UV Rising l 0.99 1.05 1.11 V EN/UV Pin Hysteresis 50 mV EN/UV Pin Current VEN/UV = 2V ±20 nA PG Upper Threshold Offset from VFB VFB Rising l 5.0 8.5 13.0 % PG Lower Threshold Offset from VFB VFB Falling l 5.0 8.5 13.0 % PG Hysteresis 0.5 % PG Leakage VPG = 42V ±200 nA PG Pull-Down Resistance VPG = 0.1V 550 1200 Ω Sync Low Input Voltage MSOP Only l 0.4 0.9 V Sync High Input Voltage INTVCC = 3.5V, MSOP Only l 2.7 3.2 V TR/SS Source Current MSOP Only l 1 2 3 µA TR/SS Pull-Down Resistance Fault Condition, TR/SS = 0.1V, MSOP Only 300 900 Ω Spread Spectrum Modulation Frequency VSYNC = 3.3V, MSOP Only 0.5 3 6 kHz |
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