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FDMS86255 датащи(PDF) 3 Page - ON Semiconductor

номер детали FDMS86255
подробное описание детали  MOSFET ??N-Channel, Shielded Gate, POWERTRENCH
PDF  7 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDMS86255 датащи(HTML) 3 Page - ON Semiconductor

  FDMS86255 Datasheet HTML 1Page - ON Semiconductor FDMS86255 Datasheet HTML 2Page - ON Semiconductor FDMS86255 Datasheet HTML 3Page - ON Semiconductor FDMS86255 Datasheet HTML 4Page - ON Semiconductor FDMS86255 Datasheet HTML 5Page - ON Semiconductor FDMS86255 Datasheet HTML 6Page - ON Semiconductor FDMS86255 Datasheet HTML 7Page - ON Semiconductor  
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FDMS86255
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3
ELECTRICAL CHARACTERISTICS (continued)TA = 25°C unless otherwise noted
Symbol
Unit
Max.
Typ.
Min.
Test Conditions
Parameter
SWITCHING CHARACTERISTICS
Qgs
Gate to Source Charge
−
14
−
nC
Qgd
Gate to Drain “Miller” Charge
−
8.8
−
nC
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD
Source to Drain Diode Forward
Voltage
VGS = 0 V, IS = 1.9 A (Note 2)
−
0.7
1.2
V
VGS = 0 V, IS = 10 A (Note 2)
−
0.8
1.3
trr
Reverse Recovery Time
IF = 10 A, di/dt = 100 A/ms
−
87
139
ns
Qrr
Reverse Recovery Charge
−
165
264
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJC is guaranteed
by design while RθCA is determined by the user’s board design.
a. 45°C/W when mounted on a 1 in2
pad of 2 oz copper.
b. 115°C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. EAS of 541 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 19 A, VDD = 150 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS = 60 A.
4. Pulse Id refers to Figure.11 Forward Bias Safe Operation Area.



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