FDMS86255 datasheet(2/7 Pages) ONSEMI

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FDMS86255

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MOSFET MAXIMUM RATINGS TA = 25 °C unless otherwise noted

Symbol

Parameter

Rating

Unit

VDS

Drain to Source Voltage

150

VGS

Gate to Source Voltage

±20

Drain Current

Continuous, TC = 25°C

Continuous, TA = 25°C (Note 1a)

Pulsed (Note 4)

271

EAS

Single Pulse Avalanche Energy (Note 3)

541

Power Dissipation, TC = 25°C

113

Power Dissipation, TA = 25°C (Note 1a)

2.7

TJ, TSTG

Operating and Storage Junction Temperature Range

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol

Parameter

Rating

Unit

RθJC

Thermal Resistance, Junction to Case

1.1

°C/W

RθJA

Thermal Resistance, Junction to Ambient (Note 1a)

ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

OFF CHARACTERISTICS

BVDSS

Drain to Source Breakdown Voltage

ID = 250 μA, VGS = 0 V

150

−

ΔBVDSS

ΔTJ

Breakdown Voltage Temperature

Coefficient

ID = 250 μA, referenced to 25°C

−

109

−

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 120 V, VGS = 0 V

−

μA

IGSS

Gate to Source Leakage Current

VGS = ±20 V, VDS = 0 V

−

±100

ON CHARACTERISTICS

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250 μA

2.0

3.0

4.0

ΔVGS(th)

ΔTJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 250 μA, referenced to 25°C

−

−11

−

mV/°C

RDS(ON)

Static Drain to Source On Resistance

VGS = 10 V, ID = 10 A

−

9.5

12.4

mΩ

VGS = 6 V, ID = 8 A

−

11.5

15.5

VGS = 10 V, ID = 10 A, TJ = 125°C

−

gFS

Forward Transconductance

VDS = 5 V, ID = 10 A

−

DYNAMIC CHARACTERISTICS

CISS

Input Capacitance

VDS = 75 V, VGS = 0 V,

f = 1 MHz

−

3200

4480

COOS

Output Capacitance

−

291

410

Crss

Reverse Transfer Capacitance

−

Gate Resistance

0.1

0.7

2.1

SWITCHING CHARACTERISTICS

td(on)

Turn−On Delay Time

VDD = 75 V, ID = 10 A,

VGS = 10 V, RGEN = 6 Ω

−

Rise Time

−

4.5

td(off)

Turn−Off Delay Time

−

Fall Time

−

6.2

Total Gate Charge

VGS = 0 V to 10 V

VDD = 75 V,

ID = 10 A

−

Total Gate Charge

VGS = 0 V to 6 V

−

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