FDMS86255 datasheet(1/7 Pages) ONSEMI

номер детали	FDMS86255

подробное описание детали	MOSFET ??N-Channel, Shielded Gate, POWERTRENCH

PDF	7 Pages

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производитель	ONSEMI [ON Semiconductor]

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DATA SHEET

www.onsemi.com

August, 2021 − Rev. 0

1

Publication Order Number:

FDMS86255/D

MOSFET – N-Channel,

Shielded Gate,

POWERTRENCH®

150V, 45A, 12.4mW

FDMS86255

Description

This N−Channel MOSFET is produced using onsemi advanced

POWERTRENCH process that incorporates Shielded Gate

technology. This process has been optimized for the on−state

resistance and yet maintain superior switching performance.

Features

• Shielded Gate MOSFET Technology

• Max RDS(on) = 12.4 mW at VGS = 10 V, ID = 10 A

• Max RDS(on) = 15.5 mW at VGS = 6 V, ID = 8 A

• Advanced Package and Silicon Combination for Low RDS(on) and

High Efficiency

• Next Generation Enhanced Body Diode Technology, Engineered for

Soft Recovery

• MSL1 Robust Package Design

• 100% UIL Tested

• RoHS Compliant

• These Device is Halogen Free

Applications

• OringFET / Load Switching

• Synchronous Rectification

• DC−DC Conversion

ORDERING INFORMATION

See detailed ordering and shipping information on

page 6 of this data sheet.

MARKING DIAGRAM

PQFN8 5X6, 1.27P

CASE 483AG

$Y&Z&3&K

$Y

= Logo

&Z

= Assembly Location

&3

= Date Code (Year and Week)

&K

= Specific Device Code

S

D

G

S

D

Top

Bottom

Pin 1

D

S

S G

Аналогичный номер детали - FDMS86255

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TECH PUBLIC Electronics...	FDMS86255-TP	3Mb / 5P	N-Channel Enhancement MOSFET

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