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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SH7041A датащи(PDF) 233 Page - Renesas Technology Corp |
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SH7041A датащи(HTML) 233 Page - Renesas Technology Corp |
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233 / 923 page  195 10.4.4 Burst Operation High-Speed Page Mode: When the burst enable bit (BE) of the DCR is set, burst accesses can be performed using high speed page mode. The timing is shown in figure 10.12. Wait cycles can be inserted during burst accesses by using the DCR. Tp Tc1 Tc2 Tc1 Tc2 Tr CK Write Read Address Data RAS CASx RDWR Data RDWR CASx RAS Row Column Column Figure 10.12 DRAM Bus Cycle (High-Speed Page Mode) RAS Down Mode: There are some instances where even if burst operation is selected, continuous accesses to DRAM will not occur, but another space will be accessed instead part way through the access. In such cases, if the RAS signal is maintained at low level during the time the other space is accessed, it is possible to continue burst operation at the time the next DRAM same row address is accessed. This is called RAS down mode. To use RAS down mode, set both the BE and RASD bits of the DCR to 1. Figures 10.13 and 10.14 show operation in RAS up and down modes. |
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