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MPC7445 датащи(PDF) 9 Page - NXP Semiconductors |
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MPC7445 датащи(HTML) 9 Page - NXP Semiconductors |
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9 / 56 page ![]() MPC7447A RISC Microprocessor Hardware Specifications, Rev. 5 Freescale Semiconductor 9 General Parameters 4 General Parameters The following list is a summary of the general parameters of the MPC7447A: Technology 0.13- μm CMOS, nine-layer metal Die size 8.51 mm × 9.86 mm Transistor count 48.6 million Logic design Fully-static Packages Surface mount 360 ceramic ball grid array (HCTE) Surface mount RoHS-compliant 360 ceramic ball grid array (HCTE) Surface mount 360 ceramic land grid array (HCTE) Core power supply 1.3 V ± 50 mV DC (nominal), or 1.2 V ± 50 mV DC (derated) I/O power supply 1.8 V ± 5% DC, or 2.5 V ± 5% DC 5 Electrical and Thermal Characteristics This section provides the AC and DC electrical specifications and thermal characteristics for the MPC7447A. 5.1 DC Electrical Characteristics The tables in this section describe the MPC7447A DC electrical characteristics. Table 2 provides the absolute maximum ratings. Number of 32-byte sectors/line 2 Parity Byte Thermal Control Dynamic frequency switching (DFS) Yes No No No Thermal diode Yes No No No Table 2. Absolute Maximum Ratings1 Characteristic Symbol Maximum Value Unit Notes Core supply voltage VDD –0.3 to 1.60 V 2 PLL supply voltage AVDD –0.3 to 1.60 V 2 Processor bus supply voltage BVSEL = 0 OVDD –0.3 to 1.95 V 3, 4 BVSEL = HRESET or OVDD OVDD –0.3 to 2.7 V 3, 5 Input voltage Processor bus Vin –0.3 to OVDD + 0.3 V 6, 7 JTAG signals Vin –0.3 to OVDD + 0.3 V — Table 1. Microarchitecture Comparison (continued) Microarchitectural Specs MPC7447A MPC7447 MPC7445 MPC7441 |
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