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AT25DF256 датащи(PDF) 33 Page - Dialog Semiconductor |
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AT25DF256 датащи(HTML) 33 Page - Dialog Semiconductor |
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33 / 43 page ![]() 32 AT25DF256 DS-25DF256–035D–2/2017 Note: 1. Maximum values indicate worst-case performance after 100,000 erase/program cycles. 2. Not 100% tested (value guaranteed by design and characterization). 3. Program and Erase operations characterized at -10°C to +85°C. Program and Erase operations at -40°C to -10°C require a minimum of 1.7V. 13.6 Program and Erase Characteristics Symbol Parameter 1.65V-3.6V 2.3V-3.6V Min Typ Max Units tPP (1) Page Program Time 256 Bytes 1.5 3.5 1.5 3.5 ms tBP Byte Program Time 12 8 µs tPE Page Erase Time 256 Bytes 6 25 6 25 ms tBLKE(1) Block Erase Time 4 Kbytes 50 75 50 60 ms 32 Kbytes 350 600 300 400 tCHPE(1)(2) Chip Erase Time 350 600 300 400 ms tOTPP(1) OTP Security Register Program Time 400 950 400 950 µs tWRSR (2) Write Status Register Time 20 40 20 40 ms |
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