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M25P128-VMF6TP датащи(PDF) 34 Page - STMicroelectronics

номер детали M25P128-VMF6TP
подробное описание детали  128 Mbit (Multilevel), Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface
PDF  41 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M25P128-VMF6TP датащи(HTML) 34 Page - STMicroelectronics

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DC and AC parameters
M25P128
34/41
Rev. 1
Table 14.
AC Characteristics
Test conditions specified in Table 10 and Table 11
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
fC
fC
Clock Frequency for the following instructions: FAST_READ,
PP, SE, BE, WREN, WRDI, RDID, RDSR, WRSR
D.C.
50
MHz
fR
Clock Frequency for READ instructions
D.C.
20
MHz
tCH
(1)
tCLH
Clock High Time
9
ns
tCL
(1)
tCLL
Clock Low Time
9
ns
tCLCH
(2)
Clock Rise Time(3) (peak to peak)
0.1
V/ns
tCHCL
(2)
Clock Fall Time(3) (peak to peak)
0.1
V/ns
tSLCH
tCSS
S Active Setup Time (relative to C)
5
ns
tCHSL
S Not Active Hold Time (relative to C)
5
ns
tDVCH
tDSU
Data In Setup Time
2
ns
tCHDX
tDH
Data In Hold Time
5
ns
tCHSH
S Active Hold Time (relative to C)
5
ns
tSHCH
S Not Active Setup Time (relative to C)
5
ns
tSHSL
tCSH
S Deselect Time
100
ns
tSHQZ
(2)
tDIS
Output Disable Time
8
ns
tCLQV
tV
Clock Low to Output Valid
8
ns
tCLQX
tHO
Output Hold Time
0
ns
tHLCH
HOLD Setup Time (relative to C)
5
ns
tCHHH
HOLD Hold Time (relative to C)
5
ns
tHHCH
HOLD Setup Time (relative to C)
5
ns
tCHHL
HOLD Hold Time (relative to C)
5
ns
tHHQX
(2)
tLZ
HOLD to Output Low-Z
8
ns
tHLQZ
(2)
tHZ
HOLD to Output High-Z
8
ns
tWHSL
(4)
Write Protect Setup Time
20
ns
tSHWL
(4)
Write Protect Hold Time
100
ns
tW
Write Status Register Cycle Time
5
15
ms
tPP
(5)
Page Program Cycle Time (256 Bytes)
2.5
7ms
Page Program Cycle Time (n Bytes)
2.5
tSE
Sector Erase Cycle Time
2
6
s
tBE
Bulk Erase Cycle Time
105
250
s
1.
tCH and tCL must be greater than or equal to 1/fC (max).
2.
Value is guaranteed by characterization, not 100% tested in production.
3.
Expressed as a slew-rate.
4.
Only applicable as a constraint for WRSR instruction when SRWD is set to 1.
5.
Due to the Multi Level Cell technology, when using the Page Program (PP) instruction to program consecutive Bytes,
optimized timings are obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. If
only a single byte is programmed, the estimated programming time is close to the time needed to program a full page of
256 Bytes. Therefore, it is highly recommended to use the Page Program (PP) instruction with a sequence of 256
consecutive Bytes. (1
≤n ≤256)



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