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ACE25AA800GFMLTH датащи(PDF) 41 Page - ACE Technology Co., LTD. |
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ACE25AA800GFMLTH датащи(HTML) 41 Page - ACE Technology Co., LTD. |
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41 / 50 page ![]() ACE25AA800G Serial NOR Flash Memory 3.0V Multi I/O with 4KB,32KB & 64KB Sector/Block Erase VER 1.1 41 Electrical Characteristics Power-On Timing Table6. Power-Up Timing and Write Inhibit Threshold Symbol Parameter Min Max Unit t VSL VCC(min) To CS# Low 10 us t PUW Time Delay Before Write Instruction 1 10 ms V WI Write Inhibit Voltage 1 2.5 V Initial Delivery State The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status Register contains 00H (all Status Register bits are 0). Data Retention and Endurance Parameter Typical Unit Minimum Pattern Data Retention Time 20 Years Erase/Program Endurance 100K Cycles Latch up Characteristics Parameter Min Max Input Voltage Respect To VSS On I/O Pins -1.0V VCC+1.0V VCC Current -100mA 100mA |
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