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NAND01G-B датащи(PDF) 46 Page - STMicroelectronics

номер детали NAND01G-B
подробное описание детали  1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PDF  64 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

NAND01G-B датащи(HTML) 46 Page - STMicroelectronics

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DC And AC parameters
NAND01G-B, NAND02G-B
46/64
11
DC And AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics Tables that
follow, are derived from tests performed under the Measurement Conditions summarized in
Table 20: Operating and AC Measurement Conditions. Designers should check that the
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 20.
Operating and AC Measurement Conditions
Parameter
NAND Flash
Units
Min
Max
Supply Voltage (VDD)
1.8V devices
1.7
1.95
V
3V devices
2.7
3.6
V
Ambient Temperature (TA)
Grade 1
0
70
°C
Grade 6
–40
85
°C
Load Capacitance (CL)
(1 TTL GATE and CL)
1.8V devices
30
pF
3V devices (2.7 - 3.6V)
50
pF
Input Pulses Voltages
1.8V devices
0
VDD
V
3V devices
0.4
2.4
V
Input and Output Timing Ref. Voltages
1.8V devices
0.9
V
3V devices
1.5
V
Output Circuit Resistor Rref
8.35
k
Ω
Input Rise and Fall Times
5
ns
Table 21.
Capacitance(1)
1.
TA = 25°C, f = 1 MHz. CIN and CI/O are not 100% tested
Symbol
Parameter
Test Condition
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0V
10
pF
CI/O
Input/Output
Capacitance(2)
2.
Input/output capacitances double in stacked devices
VIL = 0V
10
pF



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