NAND01G-B datasheet(23/64 Pages) STMICROELECTRONICS

номер детали	NAND01G-B

подробное описание детали	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

PDF	64 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

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NAND01G-B, NAND02G-B

Device operations

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Device operations

The following section gives the details of the device operations.

6.1

Read Memory Array

At Power-Up the device defaults to Read mode. To enter Read mode from another mode the

Read command must be issued, see Table 10: Commands. Once a Read command is

issued, subsequent consecutive Read commands only require the confirm command code

(30h).

Once a Read command is issued two types of operations are available: Random Read and

Page Read.

6.1.1

Random Read

Each time the Read command is issued the first read is Random Read.

6.1.2

Page Read

After the first Random Read access, the page data (2112 Bytes or 1056 Words) is

transferred to the Page Buffer in a time of tWHBH (refer to Table 25 for value). Once the

transfer is complete the Ready/Busy signal goes High. The data can then be read out

sequentially (from selected column address to last column address) by pulsing the Read

Enable signal.

The device can output random data in a page, instead of the consecutive sequential data, by

issuing a Random Data Output command.

The Random Data Output command can be used to skip some data during a sequential

data output.

The sequential operation can be resumed by changing the column address of the next data

to be output, to the address which follows the Random Data Output command.

The Random Data Output command can be issued as many times as required within a

page.

The Random Data Output command is not accepted during Cache Read operations.

NAND01G-B датащи(PDF) 23 Page - STMicroelectronics