NAND01G-B datasheet(35/64 Pages) STMICROELECTRONICS

номер детали	NAND01G-B

подробное описание детали	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

PDF	64 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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35 / 64 page

NAND01G-B, NAND02G-B

Device operations

35/64

6.9

Read Electronic Signature

The device contains a Manufacturer Code and Device Code. To read these codes three steps

are required:

one Bus Write cycle to issue the Read Electronic Signature command (90h)

one Bus Write cycle to input the address (00h)

four Bus Read Cycles to sequentially output the data (as shown in Table 14: Electronic

Signature).

Table 14.

Electronic Signature

Part Number

Byte/Word 1

Byte/Word 2

Byte/Word 3

Byte/Word 4

Manufacturer

Code

Device code

NAND01GR3B

20h

A1h

Reserved

80h

Page Size

Spare Area size

Sequential Access

Time

Block Size

Organization

(see

Table 15)

NAND01GW3B

F1h

NAND01GR4B

0020h

B1h

NAND01GW4B

C1h

NAND02GR3B

20h

AAh

NAND02GW3B

DAh

NAND02GR4B

0020h

BAh

NAND02GW4B

CAh

Table 15.

Electronic Signature Byte/Word 4

I/O

Definition

Value

Description

I/O1-I/O0

Page Size

(Without Spare Area)

0 0

0 1

1 0

1 1

Reserved

I/O2

Spare Area Size

(Byte / 512 Byte)

I/O3

Sequential Access Time

Standard (50 ns)

Fast

(30 ns)

I/O5-I/O4

Block Size

(Without Spare Area)

0 0

0 1

1 0

1 1

64K

128K

256K

Reserved

I/O6

Organization

X16

I/O7

Not Used

Reserved

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