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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LM6604 датащи(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LM6604 датащи(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 4 page  Description The PL6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 20V,ID =2.8A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON)< 100m Ω@ VGS=2.5V ● P-Channel VDS = -20V,ID = -2.8A RDS(ON) < 96mΩ @ VGS=-4.5V RDS(ON) < 145m Ω @ VGS=-2.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin Assignment SOT-23-6L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity SOT-23-6L Ø180mm 8mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±12 ±12 V TA=25℃ 2.8 -2.8 Continuous Drain Current TA=70℃ ID 2.4 -2.4 A Pulsed Drain Current (Note 1) IDM 13 -13 A Maximum Power Dissipation TA=25℃ PD 0.8 0.8 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note2) RθJA N-Ch 156 /W ℃ Thermal Resistance,Junction-to-Ambient (Note2) RθJA P-Ch 156 /W ℃ N-channel P-channel LM6604 F4FA LM6604 Enhancement Mode Power MOSFET NandP-Channel Rev : www.leiditech.com 01.06.2018 1/4 |
Аналогичный номер детали - LM6604 |
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Аналогичное описание - LM6604 |
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