LM6604 datasheet(3/4 Pages) LEIDITECH

номер детали	LM6604

подробное описание детали	NandP-Channel Enhancement Mode Power MOSFET

PDF	4 Pages

Scroll/Zoom	100%

производитель	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

домашняя страница	http://www.leiditech.com

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3 / 4 page

P-CH Electrical Characteristics (TA=25℃unless otherwise noted

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250μA

-20

Zero Gate Voltage Drain Current

IDSS

VDS=-20V,VGS=0V

-1

μA

Gate-Body Leakage Current

IGSS

VGS=±12V,VDS=0V

±100

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250μA

-0.4

-0.7

-1

VGS=-4.5V, ID=-2.5 A

Ω

Drain-Source On-State Resistance

RDS(ON)

VGS=-2.5V, ID=-2A

Ω

Forward Transconductance

gFS

VDS=-5V,ID=-2.5A

9.5

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

325

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS=-10V,VGS=0V,

F=1.0MHz

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

5.5

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=-10V, RL=5Ω

VGS=-4.5V,RGEN=3Ω

Total Gate Charge

3.2

Gate-Source Charge

Qgs

0.6

Gate-Drain Charge

Qgd

VDS=-10V,ID=-2A,

VGS=-4.5V

0.9

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=-3A

-1.2

Diode Forward Current

(Note 2)

-3

Notes:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

Guaranteed by design, not subject to production

100

145

LM6604

Rev :

www.leiditech.com

01.06.2018

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