LM6604 datasheet(2/4 Pages) LEIDITECH

номер детали	LM6604

подробное описание детали	NandP-Channel Enhancement Mode Power MOSFET

PDF	4 Pages

Scroll/Zoom	100%

производитель	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

домашняя страница	http://www.leiditech.com

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2 / 4 page

N-CH Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

Zero Gate Voltage Drain Current

IDSS

VDS=20V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±12V,VDS=0V

±100

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

0.5

0.75

1.2

VGS=2.5V, ID=2.8A

Ω

Drain-Source On-State Resistance

RDS(ON)

VGS=4.5V, ID=2.8A-

Ω

Forward Transconductance

gFS

VDS=5V,ID=3A

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

260

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS=10V,VGS=0V,

F=1.0MHz

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

2.5

Turn-on Rise Time

3.2

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=10V, RL=3.3Ω

VGS=4.5V,RGEN=6Ω

Total Gate Charge

2.9

Gate-Source Charge

Qgs

0.4

Gate-Drain Charge

Qgd

VDS=10V,ID=3A,

VGS=4.5V

0.6

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=3 A

1.2

Diode Forward Current

(Note 2)

Notes:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

Guaranteed by design, not subject to production

100

LM6604

Rev :

www.leiditech.com

01.06.2018

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