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MCP3302 датащи(PDF) 3 Page - Microchip Technology |
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MCP3302 датащи(HTML) 3 Page - Microchip Technology |
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3 / 40 page ![]() 2002 Microchip Technology Inc. DS21697B-page 3 MCP3302/04 1.0 ELECTRICAL CHARACTERISTICS Maximum Ratings* VDD........................................................................7.0V All inputs and outputs w.r.t. VSS .....-0.3V to VDD +0.3V Storage temperature .......................... -65°C to +150°C Ambient temp. with power applied ..... -65°C to +125°C Maximum Junction Temperature ....................... 150°C ESD protection on all pins (HBM) ......................... > 4kV *Notice: Stresses above those listed under “Maximum rat- ings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Expo- sure to maximum rating conditions for extended periods may affect device reliability. PIN FUNCTION TABLE Name Function CH0-CH7 Analog Inputs DGND Digital Ground CS/SHDN Chip Select / Shutdown Input DIN Serial Data In DOUT Serial Data Out CLK Serial Clock AGND Analog Ground VREF Reference Voltage Input VDD +2.7V to 5.5V Power Supply ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise noted, all parameters apply at VDD = 5V, VSS = 0V, and VREF = 5V. Full differential input configuration (Figure 3-4) with fixed common mode voltage of 2.5V. All parameters apply over temperature with TAMB = -40°C to +85°C (Note 7). Conversion speed (FSAMPLE) is 100 ksps with FCLK = 21*FSAMPLE Parameter Symbol Min Typ Max Units Conditions Conversion Rate Maximum Sampling Frequency FSAMPLE —— 100 ksps Note 8 — — 50 ksps VDD = VREF = 2.7V, VCM =1.35V Conversion Time TCONV 13 CLK periods Acquisition Time TACQ 1.5 CLK periods DC Accuracy Resolution 12 data bits + sign bits Integral Nonlinearity INL — — ±0.5 ±1 ±1 ±2 LSB LSB MCP3302/04-B MCP3302/04-C Differential Nonlinearity DNL — ±0.5 ±1 LSB Monotonic over temperature Positive Gain Error -3 -0.75 +2 LSB Negative Gain Error -3 -0.5 +2 LSB Offset Error -3 +3 +6 LSB Note 1: This specification is established by characterization and not 100% tested. 2: See characterization graphs that relate converter performance to VREF level. 3: VIN = 0.1V to 4.9V @ 1 kHz. 4: VDD =5VP-P ±500 mV @ 1 kHz, see test circuit Figure 3-3. 5: Maximum clock frequency specification must be met. 6: VREF = 400 mV, VIN = 0.1V to 4.9V @ 1 kHz 7: TSSOP devices are only specified at 25°C and +85°C. 8: For slow sample rates, see Section 6.2.1 for limitations on clock frequency. |
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