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RA4M1 датащи(PDF) 117 Page - Renesas Technology Corp

номер детали RA4M1
подробное описание детали  High efficiency 48-MHz Arm Cortex-M4 core, 256-KB code flash memory
PDF  130 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
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RA4M1 датащи(HTML) 117 Page - Renesas Technology Corp

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R01DS0355EJ0100 Rev.1.00
Page 117 of 130
Oct 8, 2019
RA4M1 Group
2. Electrical Characteristics
2.17.1
Serial Wire Debug (SWD)
Figure 2.87
SWD SWCLK timing
Table 2.78
SWD characteristics (1)
Conditions: VCC = 2.4 to 5.5 V
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
SWCLK clock cycle time
tSWCKcyc
80
-
-
ns
Figure 2.87
SWCLK clock high pulse width
tSWCKH
35
-
-
ns
SWCLK clock low pulse width
tSWCKL
35
-
-
ns
SWCLK clock rise time
tSWCKr
--
5
ns
SWCLK clock fall time
tSWCKf
--
5
ns
SWDIO setup time
tSWDS
16
-
-
ns
Figure 2.88
SWDIO hold time
tSWDH
16
-
-
ns
SWDIO data delay time
tSWDD
2
-
70
ns
Table 2.79
SWD characteristics (2)
Conditions: VCC = 1.6 to 2.4 V
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
SWCLK clock cycle time
tSWCKcyc
250
-
-
ns
Figure 2.87
SWCLK clock high pulse width
tSWCKH
120
-
-
ns
SWCLK clock low pulse width
tSWCKL
120
-
-
ns
SWCLK clock rise time
tSWCKr
--
5
ns
SWCLK clock fall time
tSWCKf
--
5
ns
SWDIO setup time
tSWDS
50
-
-
ns
Figure 2.88
SWDIO hold time
tSWDH
50
-
-
ns
SWDIO data delay time
tSWDD
2
-
150
ns
SWCLK
tSWCKcyc
tSWCKH
tSWCKf
tSWCKr
tSWCKL



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