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RA4M1 датащи(PDF) 51 Page - Renesas Technology Corp

номер детали RA4M1
подробное описание детали  High efficiency 48-MHz Arm Cortex-M4 core, 256-KB code flash memory
PDF  130 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RA4M1 датащи(HTML) 51 Page - Renesas Technology Corp

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R01DS0355EJ0100 Rev.1.00
Page 51 of 130
Oct 8, 2019
RA4M1 Group
2. Electrical Characteristics
Figure 2.22
Temperature dependency in Software Standby mode all SRAM (reference data)
Note 1.
Supply current values do not include output charge/discharge current from all pins. The values apply when internal pull-up
MOSs are in the off state.
Table 2.13
Operating and standby current (3)
Conditions: VCC = AVCC0 = 0V, VBATT = 1.6 to 3.6 V, VSS = AVSS0 = 0V
Parameter
Symbol
Typ
Max
Unit
Test conditions
Supply
current*1
RTC operation
when VCC is off
Ta = 25°C
ICC
0.8
-
μA
VBATT = 2.0 V
SOMCR.SORDRV[1:0] = 11b
(Low power mode 3)
Ta = 55°C
0.9
-
Ta = 85°C
1.0
-
Ta = 105°C
1.1
-
Ta = 25°C
0.9
-
VBATT = 3.3 V
SOMCR.SORDRV[1:0] = 11b
(Low power mode 3)
Ta = 55°C
1.0
-
Ta = 85°C
1.1
-
Ta = 105°C
1.2
-
Ta = 25°C
1.5
-
VBATT = 2.0 V
SOMCR.SORDRV[1:0] = 00b
(Normal mode)
Ta = 55°C
1.7
-
Ta = 85°C
2.0
-
Ta = 105°C
2.2
-
Ta = 25°C
1.6
-
VBATT = 3.3 V
SOMCR.SORDRV[1:0] = 00b
(Normal mode)
Ta = 55°C
1.8
-
Ta = 85°C
2.1
-
Ta = 105°C
2.3
-
0.1
1
10
100
-40
-20
0
20
40
60
80
100
Ta ( C)
Average value of the tested middle samples during product evaluation.
Average value of the tested upper-limit samples during product evaluation.



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