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RA4M1 датащи(PDF) 50 Page - Renesas Technology Corp |
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RA4M1 датащи(HTML) 50 Page - Renesas Technology Corp |
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50 / 130 page ![]() R01DS0355EJ0100 Rev.1.00 Page 50 of 130 Oct 8, 2019 RA4M1 Group 2. Electrical Characteristics Figure 2.21 Voltage dependency in Subosc-speed mode (reference data) Note 1. Supply current values do not include output charge/discharge current from all pins. The values apply when internal pull-up MOSs are in the off state. Note 2. The IWDT and LVD are not operating. Note 3. Includes the current of sub-oscillation circuit or low-speed on-chip oscillator. Note 4. VCC = 3.3 V. Table 2.12 Operating and standby current (2) Conditions: VCC = AVCC0 = 1.6 to 5.5 V Parameter Symbol Typ*4 Max Unit Test conditions Supply current*1 Software Standby mode*2 Ta = 25°C ICC 0.8 4.5 μA - Ta = 55°C 1.3 7.1 Ta = 85°C 3.5 20.2 Ta = 105°C 8.7 53.7 Increment for RTC operation with low-speed on-chip oscillator*3 0.5 - - Increment for RTC operation with sub-clock oscillator*3 0.4 - SOMCR.SODRV[1:0] are 11b (Low power mode 3) 1.2 - SOMCR.SODRV[1:0] are 00b (Normal mode) Note 1. All peripheral operations except any BGO operation are operating normally. This is the average of the actual measurements of the sample cores during product evaluation. Note 2. All peripheral operations except any BGO operation are operating at maximum. This is the average of the actual measurements for the upper limit samples during product evaluation. 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 50.0 55.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VCC (V) , ICLK = 32 MHz*2 Ta = 105 C Ta = 25 C, ICLK = 32 MHz*1 Ta = 25 C , ICLK = 32 MHz *1 Ta = 105 C , ICLK = 32 MHz *2 |
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