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RA4M1 датащи(PDF) 109 Page - Renesas Technology Corp

номер детали RA4M1
подробное описание детали  High efficiency 48-MHz Arm Cortex-M4 core, 256-KB code flash memory
PDF  130 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RA4M1 датащи(HTML) 109 Page - Renesas Technology Corp

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R01DS0355EJ0100 Rev.1.00
Page 109 of 130
Oct 8, 2019
RA4M1 Group
2. Electrical Characteristics
2.12.3
Capacitor Split Method
[1/3 Bias Method]
Note 1.
This is the wait time from when voltage bucking is started (VLCON = 1) until display is enabled (LCDON = 1).
Note 2.
This is a capacitor that is connected between voltage pins used to drive the LCD.
C1: A capacitor connected between CAPH and CAPL
C2: A capacitor connected between VL1 and GND
C3: A capacitor connected between VL2 and GND
C4: A capacitor connected between VL4 and GND
C1 = C2 = C3 = C4 = 0.47 μF ± 30%.
Figure 2.81
LCD reference voltage setup time, voltage boosting wait time, and capacitor split wait time
Table 2.66
Internal voltage boosting method LCD characteristics
Conditions: VCC = 2.2 V to 5.5 V
Parameter
Symbol Conditions
Min
Typ
Max
Unit
Test
conditions
VL4 voltage*1
VL4
C1 to C4 = 0.47 μF*2
-VCC
-
V
-
VL2 voltage*1
VL2
C1 to C4 = 0.47 μF*2
2/3 × VL4 - 0.07 2/3 × VL4
2/3 × VL4 + 0.07
V
-
VL1 voltage*1
VL1
C1 to C4 = 0.47 μF*2
1/3 × VL4 - 0.08 1/3 × VL4
1/3 × VL4 + 0.08
V
-
Capacitor split wait time*1
tWAIT
100
-
-
ms
Figure 2.81
MDSET0,
MDSET1
VLCON
LCDON
01b or 10b
00b
tVL1S
tVLWT, tWAIT



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