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LTC4230IGN датащи(PDF) 16 Page - Linear Technology |
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LTC4230IGN датащи(HTML) 16 Page - Linear Technology |
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16 / 36 page ![]() 16 LTC4230 4230f a start-up check to make sure the supply voltage is above its 2.3V UVLO threshold (see Time Point 1). If the input supply voltage is valid, the gate of the external pass transistor is pulled to ground by the internal 200 µAcurrent source connected at the GATE n pin. The TIMER pin is held low by an internal N-channel pull-down transistor (see M6, LTC4230 Block Diagram) and the FILTER pin voltage is pulled to ground by an internal 10 µA current source. Once VCCn and ON (the ON pin is >1.314V) are valid, the LTC4230 checks to make sure that GATE n is OFF (VGATEn < 0.25V) at Time Point 2. An internal timing circuit is enabled and the TIMER pin voltage ramps up at the rate described by Equation 1. At Time Point 3 (the timing period programmed by CTIMER), the TIMER pin voltage equals VTMR (1.234V). Next, the TIMER pin voltage ramps down to Time Point 4 where the LTC4230 performs two checks: (1) FILTER pin voltage is low (VFILTER < 1.19V) and (2) FAULT pin voltage is high (VFAULT > 1.284V). If both conditions are met, the LTC4230 begins a second timing (soft-start) cycle. Second Timing (Soft-Start) Cycle At the beginning of the second timing cycle (Time Point 5), the LTC4230’s FAST COMP n is armed and an internal 10 µA current source working with an internal charge pump provides the gate drive to the external pass transis- tor. An expression for the GATE n voltage slew rate is given by Equation 3: V Slew Rate dV dt A C GATE GATE GATE n n n , = µ 10 (3) where CGATEn = Power MOSFET gate input capacitance (CISS) for Channel n. For example, a Si4410DY (a 30V N-channel power MOSFET) exhibits an approximate CGATE of 3300pF at VGS = 10V. The LTC4230’s GATE n voltage rate-of-change (slew rate) for this example would be: V Slew Rate dV dt A pF V ms GATE GATE n n ,. = µ = 10 3300 303 The inrush current being delivered to the load while the GATE n is ramping is dependent on CLOADn and CGATEn. Equation 4 gives an expression for the inrush current during the second timing cycle: I dV dt CA C C INRUSH GATE LOAD LOAD GATE == µ n n n n •• 10 (4) For example, if CGATEn = 3300pF and CLOADn = 2000µF, the inrush current charging CLOADn is: IA F F A INRUSH =µ µ µ = 10 2000 0 0033 606 • . . (5) At Time Point 7, the output voltage trips FBCOMP n’s threshold, signaling an output voltage “power good” con- dition. RESET 2 and RESET 3 pull high. At Time Point 8, RESET 1 asserts high, SLOW COMP is armed and the LTC4230 enters a fault monitor mode. SOFT-START WITH CURRENT LIMITING During the second timing cycle, the inrush current is described by Equation 4. Note that there is a one-to-one correspondence in the inrush current to CLOADn. If the inrush current is large enough to cause a voltage drop greater than 50mV across the sense resistor, an internal servo loop controls the operation of the 10 µA current source at the GATE n pin to regulate the load current to: I mV R LIMIT SOFTSTART SENSE () n n = 50 (6) For example, the inrush current is limited to 5A when RSENSEn = 0.01Ω. In this fashion, the inrush current is controlled and CLOADn is charged up slowly during the soft-start cycle. The timing diagram in Figure 6 illustrates the operation of the LTC4230 in a normal power-up sequence with limited inrush current as described by Equation 6. At Time Point 5, the GATE pin voltage begins to ramp indicating that the power MOSFET is beginning to charge CLOADn. At Time Point 5, the inrush current causes a 50mV voltage drop across RSENSEn and an internal servo loop engages, limit- ing the inrush current to a fixed level. At Time Point 6, the GATE n pin voltage continues to ramp as CLOADn charges until VOUTn reaches its final value. The charging current APPLICATIO S I FOR ATIO |
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