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LTC4230IGN датащи(PDF) 16 Page - Linear Technology

номер детали LTC4230IGN
подробное описание детали  Triple Hot Swap Controller with Multifunction Current Control
PDF  36 Pages
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производитель  LINER [Linear Technology]
домашняя страница  http://www.linear.com
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LTC4230IGN датащи(HTML) 16 Page - Linear Technology

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LTC4230
4230f
a start-up check to make sure the supply voltage is above
its 2.3V UVLO threshold (see Time Point 1). If the input
supply voltage is valid, the gate of the external pass
transistor is pulled to ground by the internal 200
µAcurrent
source connected at the GATE
n pin. The TIMER pin is held
low by an internal N-channel pull-down transistor (see
M6, LTC4230 Block Diagram) and the FILTER pin voltage
is pulled to ground by an internal 10
µA current source.
Once VCCn and ON (the ON pin is >1.314V) are valid, the
LTC4230 checks to make sure that GATE
n is OFF (VGATEn
< 0.25V) at Time Point 2. An internal timing circuit is
enabled and the TIMER pin voltage ramps up at the rate
described by Equation 1. At Time Point 3 (the timing period
programmed by CTIMER), the TIMER pin voltage equals
VTMR (1.234V). Next, the TIMER pin voltage ramps down
to Time Point 4 where the LTC4230 performs two checks:
(1) FILTER pin voltage is low (VFILTER < 1.19V) and (2)
FAULT pin voltage is high (VFAULT > 1.284V). If both
conditions are met, the LTC4230 begins a second timing
(soft-start) cycle.
Second Timing (Soft-Start) Cycle
At the beginning of the second timing cycle (Time Point 5),
the LTC4230’s FAST COMP
n is armed and an internal
10
µA current source working with an internal charge
pump provides the gate drive to the external pass transis-
tor. An expression for the GATE
n voltage slew rate is given
by Equation 3:
V
Slew Rate
dV
dt
A
C
GATE
GATE
GATE
n
n
n
,
=
µ
10
(3)
where CGATEn = Power MOSFET gate input capacitance
(CISS) for Channel n.
For example, a Si4410DY (a 30V N-channel power MOSFET)
exhibits an approximate CGATE of 3300pF at VGS = 10V. The
LTC4230’s GATE
n voltage rate-of-change (slew rate) for
this example would be:
V
Slew Rate
dV
dt
A
pF
V
ms
GATE
GATE
n
n
,.
=
µ
=
10
3300
303
The inrush current being delivered to the load while the
GATE
n is ramping is dependent on CLOADn and CGATEn.
Equation 4 gives an expression for the inrush current
during the second timing cycle:
I
dV
dt
CA
C
C
INRUSH
GATE
LOAD
LOAD
GATE
== µ
n
n
n
n
••
10
(4)
For example, if CGATEn = 3300pF and CLOADn = 2000µF, the
inrush current charging CLOADn is:
IA
F
F
A
INRUSH
µ
µ
=
10
2000
0 0033
606
.
.
(5)
At Time Point 7, the output voltage trips FBCOMP
n’s
threshold, signaling an output voltage “power good” con-
dition. RESET 2 and RESET 3 pull high. At Time Point 8,
RESET 1 asserts high, SLOW COMP is armed and the
LTC4230 enters a fault monitor mode.
SOFT-START WITH CURRENT LIMITING
During the second timing cycle, the inrush current is
described by Equation 4. Note that there is a one-to-one
correspondence in the inrush current to CLOADn. If the
inrush current is large enough to cause a voltage drop
greater than 50mV across the sense resistor, an internal
servo loop controls the operation of the 10
µA current
source at the GATE
n pin to regulate the load current to:
I
mV
R
LIMIT SOFTSTART
SENSE
()
n
n
=
50
(6)
For example, the inrush current is limited to 5A when
RSENSEn = 0.01Ω.
In this fashion, the inrush current is controlled and CLOADn
is charged up slowly during the soft-start cycle.
The timing diagram in Figure 6 illustrates the operation of
the LTC4230 in a normal power-up sequence with limited
inrush current as described by Equation 6. At Time Point 5,
the GATE pin voltage begins to ramp indicating that the
power MOSFET is beginning to charge CLOADn. At Time
Point 5, the inrush current causes a 50mV voltage drop
across RSENSEn and an internal servo loop engages, limit-
ing the inrush current to a fixed level. At Time Point 6, the
GATE
n pin voltage continues to ramp as CLOADn charges
until VOUTn reaches its final value. The charging current
APPLICATIO S I FOR ATIO



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