NVMFS024N06C datasheet(1/6 Pages) ONSEMI

номер детали	NVMFS024N06C

подробное описание детали	MOSFET - Power, Single N-Channel, SO-8 FL 60 V, 22 m, 25 A

PDF	6 Pages

Scroll/Zoom	100%

производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

Logo

1 / 6 page

December, 2019 − Rev. 1

1

Publication Order Number:

NVMFS024N06C/D

MOSFET - Power, Single

N-Channel, SO-8 FL

60 V, 22 mW, 25 A

NVMFS024N06C

Features

• Small Footprint (5x6 mm) for Compact Design

• Low RDS(on) to Minimize Conduction Losses

• Low QG and Capacitance to Minimize Driver Losses

• NVMFWS024N06C − Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Power Tools, Battery Operated Vacuums

• UAV/Drones, Material Handling

• BMS/Storage, Home Automation

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

60

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJC

(Notes 1, 3)

Steady

State

TC = 25°C

ID

25

A

TC = 100°C

17

Power Dissipation

RqJC (Note 1)

Steady

State

TC = 25°C

PD

28

W

TC = 100°C

14

Continuous Drain

Current RqJA

(Notes 1, 2, 3)

Steady

State

TA = 25°C

ID

8

A

TA = 100°C

6

Power Dissipation

RqJA (Notes 1, 2)

Steady

State

TA = 25°C

PD

3.4

W

TA = 100°C

1.7

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

158

A

Operating Junction and Storage Temperature

Range

TJ, TSTG

−55 to

+175

°C

Source Current (Body Diode)

IS

23

A

Single Pulse Drain−to−Source Avalanche

Energy (IL = 5.3 Apk)

EAS

14

mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case – Steady State (Note 1)

RqJC

5.3

°C/W

Junction−to−Ambient – Steady State (Note 1)

RqJA

43.4

MARKING

DIAGRAM

www.onsemi.com

V(BR)DSS

RDS(ON) MAX

ID MAX

60 V

22 mW @ 10 V

25 A

N−CHANNEL MOSFET

G (4)

S (1,2,3)

D (5−8)

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

XXXXXX

AYWZZ

1

S

G

D

XXXXXX = 24N06C

XXXXXX = (NVMFS024N06C) or

XXXXXX = 24N06W

XXXXXX = (NVMFWS024N06C)

A

= Assembly Location

Y

= Year

W

= Work Week

ZZ

= Lot Traceability

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

Аналогичный номер детали - NVMFS024N06C

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	NVMFS020N06C	187Kb / 7P	MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 m, 28 A January, 2020-Rev. 0
	NVMFS020N06CT1G	187Kb / 7P	MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 m, 28 A January, 2020-Rev. 0
	NVMFS021N10MCL	325Kb / 8P	MOSFET ??Power, Single N-Channel 100 V, 23 m, 31 A December, 2021-Rev. 0
	NVMFS021N10MCLT1G	325Kb / 8P	MOSFET ??Power, Single N-Channel 100 V, 23 m, 31 A December, 2021-Rev. 0
	NVMFS025P04M8L	199Kb / 7P	MOSFET - Power, Single P-Channel -40 V, 23 m, -34.6 A March, 2021-Rev. 1

More results

Аналогичное описание - NVMFS024N06C

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	NTMFS4833N	75Kb / 7P	Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL November, 2006 ??Rev. 2
	NTMFS4744N	93Kb / 7P	Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL July, 2007 - Rev. 4
	NTMFS4821N	146Kb / 7P	Power MOSFET 30V 58.5A Single N-channel, SO-8 FL May, 2012 ??Rev. 4
	NTMFS0D8N02P1E	147Kb / 7P	MOSFET - Power, Single N-Channel, SO8-FL 25 V, 0.68 m, 365 A March, 2020 ??Rev. 0
	NTMFS4C302N	184Kb / 7P	MOSFET ??Single, N-Channel, Logic Level, SO-8 FL 30 V, 1.15 m, 230 A February, 2021-Rev. 3
	NVLJWS022N06CL	160Kb / 7P	MOSFET - Power, Single N-Channel 60 V, 21 m, 25 A April, 2022 ??Rev. 1
	NVMFS4C306N	201Kb / 8P	MOSFET - Power, Single N-Channel, SO-8 FL 30 V, 3.4 m, 71 A October, 2020-Rev. 0
	NVMFS016N06C	189Kb / 7P	MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 m, 33 A January, 2020?뭃ev. 0
	NTMFS4922NE	165Kb / 8P	Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL May, 2012 - Rev. 1
	NTMFS4C13N	181Kb / 8P	MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A May, 2019 - Rev. 2

More results

NVMFS024N06C датащи(PDF) 1 Page - ON Semiconductor

NVMFS024N06C датащи(HTML) 1 Page - ON Semiconductor

Аналогичный номер детали - NVMFS024N06C

Аналогичное описание - NVMFS024N06C

Html Pages

1 2 3 4 5 6

датащи скачать

ссылки URL