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NVMFS024N06C датащи(PDF) 4 Page - ON Semiconductor

номер детали NVMFS024N06C
подробное описание детали  MOSFET - Power, Single N-Channel, SO-8 FL 60 V, 22 m, 25 A
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NVMFS024N06C датащи(HTML) 4 Page - ON Semiconductor

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TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
VGS = 0 V
TJ = 25°C
f = 1 MHz
CISS
COSS
CRSS
VDS = 48 V
ID = 3 A
TJ = 25°C
QGS
QGD
VGS = 10 V
VDS = 48 V
ID = 3 A
td(off)
td(on)
tf
tr
TJ = 25°C TJ = −55°C
1
10
100
1000
010
30
60
0
2
4
6
8
10
02
4
5
1
0
100
1
0.4
0.5
0.6
0.7
0.8
0.9
20
40
50
1
3
1
3
5
7
9
0.3
TJ = 125°C
VGS = 0 V
6
100
10
0.1
10
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
RDS(on) Limit
Thermal Limit
Package Limit
1 ms
10 ms
TC = 25°C
VGS ≤ 10 V
Single Pulse
1
10
100
0.1
100
10
1
0.1
10 ms
100 ms
100 ms & 1 sec
TJ(initial) = 100°C
TJ(initial) = 25°C
1
10
1E−06
100
1E−05
1E−04
1E−03
1E−02



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