PJM123NSA

N- Enhancement Mode Field Effect Transistor

2 /

6

Electrical Characteristics

℃, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static Parameters

Drain-Source Breakdown Voltage

100

-

-

V

Gate Leakage Current

-

-

±10

μA

Zero Gate Voltage Drain Current

-

-

1

μA

250μA

1

-

3

V

-

3.5

6

Ω

-

3.8

10

Ω

80

-

-

mS

Dynamic Parameters

Input Capacitance

f = 1MHz

-

29

60

pF

Output Capacitance

-

10

15

Reverse Transfer Capacitance

-

2

6

Switching Parameters

Turn-On Delay Time

-

-

8

ns

Turn-On Rise Time

-

-

8

Turn-Off Delay Time

-

-

13

Turn-Off Fall Time

-

-

16

Total Gate Charge

-

1.4

2

nC

Gate-Source Charge

-

0.15

0.25

Gate-Drain Charge

-

0.2

0.4

Drain-source Diode Parameters

Source-Drain Diode Current

-

-

0.17

A

Forward Diode Voltage

-

-

1.3

V

Notes:1. Surface mounted on FR4 board using the minimum recommended pad size.

2. Pulse Test: Pulse width=300

μs, duty cycle≤2%.

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Revision：1.

1 Jan-2019