PJM123NSA datasheet(1/6 Pages) PJSEMI

номер детали	PJM123NSA

подробное описание детали	N- Enhancement Mode Field Effect Transistor

PDF	6 Pages

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производитель	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

домашняя страница	http://www.pingjingsemi.com/MainEn/Main.aspx

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PJM123NSA

N- Enhancement Mode Field Effect Transistor

www.pingjingsemi.com

Revision：1.

1 Jan-2019

1 /

6

Features

◆

Surface Mount Package

◆

Low RDS(ON)

◆

ESD protected(HBM) up to 2KV

Applications

◆

Switching Application

◆

Small Servo Motor Controls

Absolute Maximum Ratings

(TC=25

℃, unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current Note1

ID

0.17

A

Pulsed Drain Current

tp=10

μs

IDM

0.68

Power Dissipation

PD

0.9

W

Junction Temperature

TJ

150

°C

Storage Temperature Range

TSTG

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ.

Units

Maximum Junction-to-Ambient Note1

RθJA

139

°C/W

D

S

G

SOT-23

Schematic diagram

1. Gate 2.Source 3.Drain

Marking: B123

Аналогичный номер детали - PJM123NSA

производитель	номер детали	датащи	подробное описание детали
Dongguan Pingjingsemi T...	PJM100H02NTE	1Mb / 5P	N-Channel Power MOSFET
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Аналогичное описание - PJM123NSA

производитель	номер детали	датащи	подробное описание детали
Dongguan Pingjingsemi T...	PJM2302NSA-S	1Mb / 6P	N- Enhancement Mode Field Effect Transistor
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	PJM3416NSC	3Mb / 7P	N- Enhancement Mode Field Effect Transistor

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PJM123NSA датащи(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

PJM123NSA датащи(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Аналогичный номер детали - PJM123NSA

Аналогичное описание - PJM123NSA

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