PEMF21 datasheet(6/11 Pages) NEXPERIA

6 / 11 page

2004 Jan 12

NXP Semiconductors

Product data sheet

12 V PNP loadswitch

PEMF21

handbook, halfpage

400

600

200

300

500

100

MHC697

−10−1

−1

−10

hFE

IC (mA)

−102

−103

(1)

(2)

(3)

Fig.2

DC current gain as a function of collector

current; typical values.

Transistor TR1; VCE = −2 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−10

VCE (V)

−1200

−400

−800

−1000

−200

−600

−2

−4

−6

(mA)

−8

MHC698

(5)

(6)

(7)

(8)

(9)

(10)

(1)

(2)

(3)

(4)

Fig.3

Collector current as a function of

collector-emitter voltage; typical values.

Transistor TR1;

Tamb = 25 °C.

(1) IB = −7.0 mA.

(2) IB = −6.3 mA.

(3) IB = −5.6 mA.

(4) IB = −4.9 mA.

(5) IB = −4.2 mA.

(6) IB = −3.5 mA.

(7) IB = −2.8 mA.

(8) IB = −2.1 mA.

(9) IB = −1.4 mA.

(10) IB = −0.7 mA.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MHC699

−10−1

−1

−10

VBE

(mV)

IC (mA)

−102

−103

(1)

(2)

(3)

Fig.4

Base-emitter voltage as a function of

collector current; typical values.

Transistor TR1; VCE = −2 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MHC700

−10−1

−1

−10

VBEsat

(mV)

IC (mA)

−102

−103

(1)

(2)

(3)

Fig.5

Base-emitter saturation voltage as a

function of collector current; typical values.

Transistor TR1; IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

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