2004 Jan 12

3

NXP Semiconductors

Product data sheet

12 V PNP loadswitch

PEMF21

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Notes

1.

Transistor mounted on an FR4 printed-circuit board.

2.

Reflow soldering is the only recommended soldering method.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Transistor TR1

collector-base voltage

open emitter

−

−15

V

collector-emitter voltage

open base

−

−12

V

emitter-base voltage

open collector

−

−6

V

collector current (DC)

−

−500

mA

peak collector current

−

−1

A

peak base current

−

−100

mA

total power dissipation

−

200

mW

Transistor TR2

collector-base voltage

open emitter

−

50

V

collector-emitter voltage

open base

−

50

V

emitter-base voltage

open collector

−

10

V

input voltage

positive

−

+40

V

negative

−

−10

V

output current (DC)

−

100

mA

peak collector current

−

100

mA

total power dissipation

−

200

mW

Per device

total power dissipation

−

300

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Per device

thermal resistance from junction to

ambient

notes 1 and 2

416

K/W