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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PEMF21 датащи(PDF) 5 Page - Nexperia B.V. All rights reserved |
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PEMF21 датащи(HTML) 5 Page - Nexperia B.V. All rights reserved |
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5 / 11 page  2004 Jan 12 4 NXP Semiconductors Product data sheet 12 V PNP loadswitch PEMF21 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Transistor TR1 ICBO collector-base cut-off current VCB = −15 V; IE = 0 − − −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 nA hFE DC current gain VCE = −2 V; IC = −10 mA 200 − − VCEsat collector-emitter saturation voltage IC = −200 mA; IB = −10 mA − − −250 mV RCEsat equivalent on-resistance IC = −500 mA; IB = −50 mA; note 1 − 300 500 m Ω VBEsat base-emitter saturation voltage IC = −500 mA; IB = −50 mA; note 1 − − −1.1 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −100 mA; note 1 − − −0.9 V fT transition frequency IC = −100 mA; VCE = −5 V; f = 100 MHz 100 280 − MHz Cc collector capacitance VCB = −10 V; IE = ie = 0; f = 1 MHz − − 10 pF Transistor TR2 ICBO collector-base cut-off current VCB = 50 V; IE = 0 − − 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 − − 1 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 400 µA hFE DC current gain VCE = 5 V; IC = 5 mA 30 − − VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − − 300 mV Vi(off) input-off voltage VCE = 5 V; IC = 100 µA − − 0.5 V Vi(on) input-on voltage VCE = 0.3 V; IC = 10 mA 3 − − V R1 input resistor 7 10 13 k Ω resistor ratio 0.8 1 1.2 Cc collector capacitance VCB = 10 V; IE = ie = 0; f = 1 MHz − − 2.5 pF R2 R1 -------- |
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