4.5

3.0

- 2 -

N-Channel Electrical Characteristics (Tj = 25℃ unless otherwise specified)

N 沟道电气特性

25℃

Parameter 参数

符号

Test Condition 测试条件

最小值

典型值

最大值

单位

Static 静态参数

Drain-Source Breakdown Voltage 漏源击穿电压

60

V

Drain-Source On-State Resistance 漏源导通电阻

38.0

48.0

Drain-Source On-State Resistance 漏源导通电阻

A

42.0

60.0

m

Ω

Gate Threshold Voltage

开启电压

1

1.65

3

V

Zero Gate Voltage Drain Current 零栅压漏极电流

1

uA

Gate Body Leakage

漏极短路时截止栅电流

± 100

nA

Forward Transconductance

正向跨导

17

S

Dynamic 动态参数

Total Gate Charge

栅极总电荷

13

25

Gate-Source Charge

栅-源极电荷

1.2

Gate-Drain Charge

栅-漏极电荷

A

5.8

nC

Turn-On Delay Time

导通延迟时间

9.8

Turn-On Rise Time

导通上升时间

4.4

Turn-Off Delay Time

关断延迟时间

37

Turn-Off Fall Time

关断下降时间

Ω

Ω

5

ns

Input Capacitance

输入电容

655

Output Capacitance

输出电容

53

Reverse Transfer Capacitance

反向传输电容

f = 1.0 MHz

28.5

pF

Source-Drain Diode 源漏二极管参数

Max. Diode Forward Current 最大正向电流

3.8

A

Diode Forward Voltage

正向电压

1

V

Note: Pulse test: pulse width <= 300us, duty cycle<= 2%

注意：脉冲测试：脉冲宽度<= 300us 死区<= 2%

2.0

11

HM